An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2=27.000 to 29.980 in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 m or greater is 500010.sup.3/mL or less.

Various particular embodiments include a method for controlling chemical mechanical polishing, including: polishing a semiconductor wafer in a chemical mechanical polishing (CMP) tool; measuring a resistance of a resistive pathway through the semiconductor wafer while the semiconductor wafer is undergoing polishing in the CMP tool; and terminating the polishing of the semiconductor wafer when the measured resistance reaches a target resistance.

An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential E.sub.A of cobalt and the corrosion potential E.sub.B of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference E.sub.AE.sub.B between the corrosion potential E.sub.A and the corrosion potential E.sub.B is 0300 mV.

An information processing apparatus (5) includes: an information acquisition section (500) configured to acquire polishing conditions including top-ring state information, polishing-table state information, and polishing-fluid-supply-nozzle state information in the chemical mechanical polishing in chemical mechanical polishing of a substrate performed by a substrate processing apparatus including a polishing table configured to rotatably support a polishing pad, a top ring configured to press the substrate against the polishing pad, and a polishing-fluid supply nozzle configured to supply a polishing fluid onto the polishing pad; and a state prediction section (501) configured to predict substrate state information for the substrate on which the chemical mechanical polishing is performed under the polishing conditions by inputting the polishing conditions acquired by the information acquisition section (500) to a learning model (10A) having been generated by machine learning that causes the learning model (10A) to learn a correlation between the polishing conditions and the substrate state information indicating a state of the substrate on which the chemical mechanical polishing is performed under the polishing conditions.

The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is a photopolymerizable composition containing a block copolymer, a UV curable acrylate, and a photoinitiator.

A method of controlling polishing includes polishing a substrate and receiving an identification of a selected spectral feature, a wavelength range having a width, and a characteristic of the selected spectral feature to monitor during polishing. A sequence of spectra of light from the substrate is measured while the substrate is being polished. A sequence of values of the characteristic of the selected spectral feature is generated from the sequence of spectra. For at least some spectra from the sequence of spectra, a modified wavelength range is generated based on a position of the spectral feature within a previous wavelength range used for a previous spectrum in the sequence of spectra, the modified wavelength range is searched for the selected spectral feature, and a value of a characteristic of the selected spectral feature is determined.

[Object] To provide a gas nozzle which meets a requirement to suppress the fall of particles. [Solution] A gas nozzle 4 according to an aspect of the present invention includes a columnar main body 13 formed of a ceramic sintered body provided with a through-hole 12 formed therein through which a gas flows, an exhaust port 15 of the through-hole 12 for the gas is formed in one end surface S1 of the main body 13, and the mean width of the profile elements (Rsm) of the one end surface S1 is 5 times or more the average crystalline grain diameter of the ceramic sintered body.

[Object] To provide a gas nozzle which meets a requirement to suppress the fall of particles. [Solution] A gas nozzle 4 according to an aspect of the present invention includes a columnar main body 13 formed of a ceramic sintered body provided with a through-hole 12 formed therein through which a gas flows, an exhaust port 15 of the through-hole 12 for the gas is formed in one end surface S1 of the main body 13, and the mean width of the profile elements (Rsm) of the one end surface S1 is 5 times or more the average crystalline grain diameter of the ceramic sintered body.