An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25 C.

Provided are: a composition for chemical mechanical polishing; and a polishing method using the same. The composition allows rapid polishing of a polishing surface that contains a silver material for wiring, and makes it possible to obtain a polished surface having a high reflective property. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a liquid medium, (C) an oxidizing agent, and (D) a nitrogen-containing hetrocyclic compound. The absolute value of the zeta potential of the (A) component of the composition for chemical mechanical polishing is 10 mV or more. When the content of the (C) component is noted as Mc (mass %) and the content of the (D) component is noted as Md (mass %), Mc/Md is 10 to 200.

Provided is a wafer polishing method comprising: a step of determining a first correlation a second correlation; a step of calculating mechanical polishing rate/chemical polishing rate; a step of obtaining a relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and one or more indications of wafer flatness and determining a specific range of the ratio of the mechanical polishing rate to the chemical polishing rate; a step of selecting a first target polishing solution that meets the specific range of the ratio of the mechanical polishing rate to the chemical polishing rate based on the first correlation and the second correlation; and a step of polishing wafers using the first target polishing solution. Also provided is a wafer production method including a step of performing a polishing process by the above wafer polishing method.

Provided is a wafer polishing method comprising: a step of determining a first correlation a second correlation; a step of calculating mechanical polishing rate/chemical polishing rate; a step of obtaining a relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and one or more indications of wafer flatness and determining a specific range of the ratio of the mechanical polishing rate to the chemical polishing rate; a step of selecting a first target polishing solution that meets the specific range of the ratio of the mechanical polishing rate to the chemical polishing rate based on the first correlation and the second correlation; and a step of polishing wafers using the first target polishing solution. Also provided is a wafer production method including a step of performing a polishing process by the above wafer polishing method.

A polishing agent which has excellent storage stability and a high selective ratio between a silicon oxide and a stopper film while maintaining the silicon oxide removal. A polishing agent containing abrasive grains, an anionic polymer, an acidic compound selected from phosphoric acid compounds and organic acid compounds, and water, wherein the anionic polymer is a copolymer containing a hydrophobic monomer and an anionic monomer, an acid value of the anionic polymer is 20 to 400 mgKOH/g; a partition coefficient of the hydrophobic monomer is 0 to 4; the anionic monomer contains at least one type selected from unsaturated monocarboxylic acids and salts thereof, and when an acid compound having a highest molar concentration among the acidic compounds is defined as a first acidic compound, pKa of the first acidic compound and pH of the polishing agent satisfy a following relationship: |pKapH|1.5.

The one-side polishing apparatus for a workpiece of the present disclosure further comprises a surface displacement measurement section that can measure displacement of an exposed top surface, which is a top surface of the polishing pad that is not covered by the polishing head. The method for one-side polishing of a workpiece of the present disclosure polishes, in the polishing process, one side of the workpiece while measuring displacement of the exposed upper surface by the surface displacement measurement section that can measure the displacement of the exposed upper surface. The method for manufacturing silicon wafers of the present disclosure uses the method for one-side polishing of a workpiece as described above.