Intelligent, hand-held, battery-operated, random-orbital nibber sander and polisher tools are adapted for removing defects in painted surfaces. Both tools are substantially the same size, with the exception of the head of the tool, wherein different pad sizes, RPM and orbital patterns are provided for the distinct sanding and polishing operations. Multiple operational features ensure accurate, reliable and repeatable sanding and polishing operations, with capabilities for identifying operator error. The inventive tools may include trigger time/RPM setting and indication, leveling, network communications, calibration downloading, and internal battery life monitoring with a charge-remaining indicator.

There is provided a cutting machine for cutting a wafer using a cutting blade. The cutting machine includes a shape storage section, a shape measurement unit, a determination section, and an end face correction device. The shape storage section stores a cross-sectional shape of a support surface, which a mount of a cutting unit has, in an axial direction of a spindle. The shape measurement unit contactlessly measures the cross-sectional shape of the support surface in the axial direction of the spindle. Through a comparison between the cross-sectional shape stored in the shape storage section and the cross-sectional shape measured by the shape measurement unit, the determination section determines whether or not the support surface needs a correction. The end face correction device corrects a shape of the support surface.

A grinding machine including a support pedestal that supports a drive motor that supports an abrasive wheel rotatably coupled to the drive motor; a motor drive operatively coupled to the drive motor; a safety controller operatively coupled with the drive motor and motor drive; an E-stop operatively coupled to the safety controller; a foot pedal switch operatively coupled to the safety controller; and a 480 volt alternating current 3 phase electrical power supply electrically coupled to the drive motor.

The present disclosure describes an apparatus and a method to detect a polishing pad profile during a polish process and adjust the polishing process based on the detected profile. The apparatus can include a polishing pad configured to polishing a substrate, a substrate carrier configured to hold the substrate against the polishing pad, and a detection module configured to detect a profile of the polishing pad. The detection module can include a probe configured to measure a thickness of one or more areas on the polishing pad, and a beam configured to support the probe, where the probe can be further configured to move along the beam.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

A machine tool includes a tool that machines a workpiece while being contact with the workpiece, a state-quantity-data acquisition unit that acquires state quantity data of the workpiece and of the tool, a state-quantity-estimation-data calculation unit that calculates state quantity estimation data from a simulation model including a device dynamic characteristic model indicating a dynamic characteristic of the tool and a workpiece model indicating a target shape of the workpiece, and a machining-state calculation unit that calculates machining state data indicating a machining state of the workpiece based on the state quantity data and the state quantity estimation data.

A machine tool includes a tool that machines a workpiece while being contact with the workpiece, a state-quantity-data acquisition unit that acquires state quantity data of the workpiece and of the tool, a state-quantity-estimation-data calculation unit that calculates state quantity estimation data from a simulation model including a device dynamic characteristic model indicating a dynamic characteristic of the tool and a workpiece model indicating a target shape of the workpiece, and a machining-state calculation unit that calculates machining state data indicating a machining state of the workpiece based on the state quantity data and the state quantity estimation data.

A method includes supplying slurry onto a polishing pad. A wafer is held against the polishing pad with a first piezoelectric layer interposed between a pressure unit and the wafer. A first voltage generated by the first piezoelectric layer is detected. The wafer is pressed, using the pressure unit, against the polishing pad according to the detected first voltage generated by the first piezoelectric layer. The wafer is polished using the polishing pad.

A method includes supplying slurry onto a polishing pad. A wafer is held against the polishing pad with a first piezoelectric layer interposed between a pressure unit and the wafer. A first voltage generated by the first piezoelectric layer is detected. The wafer is pressed, using the pressure unit, against the polishing pad according to the detected first voltage generated by the first piezoelectric layer. The wafer is polished using the polishing pad.