A method includes measuring a first thickness at a first location of the polishing pad and a second thickness at a second location of the polishing pad; obtaining a first reference thickness at the first location of the polishing pad, wherein the first reference thickness is an average thickness of multiple thicknesses at the first location; obtaining a second reference thickness at the second location of the polishing pad, wherein the second reference thickness is an average thickness of multiple thicknesses at the second location; calculating a first thickness difference; calculating a second thickness difference; modifying a conditioning parameter value at the first location of the polishing pad; and sweeping a conditioner across a surface of the polishing pad; and applying a downforce or a sweeping speed to the conditioner that urges the conditioner against the first location of the polishing pad according to the modified conditioning parameter value.

A method includes supplying slurry onto a polishing pad; holding a wafer against the polishing pad with a piezoelectric layer interposed vertically between a pressure unit and the wafer; exerting a force on the piezoelectric layer using the pressure unit to make the piezoelectric layer directly press the wafer; generating, using the piezoelectric layer, a first voltage corresponding to a first portion of the wafer and a second voltage corresponding to a second portion of the wafer; tuning the force exerted on the piezoelectric layer according to the first voltage and the second voltage; and polishing, using the polishing pad, the wafer.

A method includes supplying slurry onto a polishing pad; holding a wafer against the polishing pad with a piezoelectric layer interposed vertically between a pressure unit and the wafer; exerting a force on the piezoelectric layer using the pressure unit to make the piezoelectric layer directly press the wafer; generating, using the piezoelectric layer, a first voltage corresponding to a first portion of the wafer and a second voltage corresponding to a second portion of the wafer; tuning the force exerted on the piezoelectric layer according to the first voltage and the second voltage; and polishing, using the polishing pad, the wafer.

A substrate processing apparatus which causes a processing tape to abut against a processing object, including: a tape supply reel configured to supply the processing tape; a tape recovery reel configured to recover the processing tape; a recovery motor configured to apply a torque to the tape recovery reel; a tape feed motor configured to feed the processing tape between the tape supply reel and the tape recovery reel; and a control unit configured to control the tape feed motor, wherein the control unit controls the torque of the recovery motor depending on a change in an outer diameter of a roll of the processing tape wound by the tape recovery reel such that tension applied to the processing tape is constant, using a feed length of the tape fed by the tape feed motor and a thickness of the processing tape.

Ways of providing efficient and cost-saving grinding of floors or of other similar surfaces by a grinding machine having replaceable grinding tools are disclosed. On an operator's console of the grinding machine, a number of parameters according to which the grinding machine is desired to operate are selected. Obtained measured values are fed back from the grinding machine via a control center to the operator's console, the grinding speed of the tools being arranged, via the operator's console, to be adjusted manually or that the same is automatically adjusted. Information about the wear of the tools is given to the operator's console from measuring members for the measurement. Apparatus implementing the ways are also disclosed.

Making a piston includes receiving a piston crown including a combustion face forming a combustion bowl. The piston includes a base material, and a thermal barrier coating (TBC) material forming at least a portion of the combustion face including a bowl edge. Making a piston further includes advancing a polishing tool into contact with the combustion face, spinning the polishing tool such that a positive piston profile is polished via contact with a negative tool profile, and removing some of the TBC material based on the spinning the polishing tool relative to the piston.

A CMP apparatus includes a polishing unit 3, a cleaning unit 4, a load/unload unit 2, a transfer unit, and a control section 5 configured to control transfer of a substrate in the transfer unit. When the polishing unit includes a plurality of polishing sections, or the cleaning unit includes a plurality of cleaning sections, the control section 5 can set a test mode that operates the polishing section or the cleaning section for a test to some of the plurality of polishing sections, or some of the plurality of cleaning sections, causes a substrate to be transferred to the polishing section or the cleaning section to which the test mode is not set, and causes a test substrate different from the substrate to be transferred to the polishing section or the cleaning section to which the test mode is set.

A CMP apparatus includes a polishing unit 3, a cleaning unit 4, a load/unload unit 2, a transfer unit, and a control section 5 configured to control transfer of a substrate in the transfer unit. When the polishing unit includes a plurality of polishing sections, or the cleaning unit includes a plurality of cleaning sections, the control section 5 can set a test mode that operates the polishing section or the cleaning section for a test to some of the plurality of polishing sections, or some of the plurality of cleaning sections, causes a substrate to be transferred to the polishing section or the cleaning section to which the test mode is not set, and causes a test substrate different from the substrate to be transferred to the polishing section or the cleaning section to which the test mode is set.

Disclosed is a method for determining location of a lens machining tool (24) having an offset location according to a first direction (Y) smaller than a first predetermined threshold, including the steps of manufacturing a calibration piece (10) according to a predetermined theoretical geometry by using the lens machining tool for providing a at least partially annular groove in a main surface of the calibration piece, the at least partially annular groove being configured to form at least one sharp edge defining a slope discontinuity on the main surface; measuring a distance between the at least one sharp edge and a turning center of the calibration piece for providing data of geometrical characteristics of the calibration piece; and deducing from the measured data a location of the lens machining tool according to a second direction (X) distinct from the first direction.

A method determines state information relating to a belt grinder. The belt grinder has at least one abrasive belt for grinding a workpiece. The method includes providing measurement data relating to the belt grinder, and determining the state information from the measurement data using a machine learning system. The machine learning system is configured to determine the state information based on the provided measurement data.