A substrate processing method includes polishing a target surface of a substrate to be polished by moving a polishing brush in a horizontal direction while pressing the polishing brush against the polishing target surface of the substrate which rotates in a horizontal posture around a vertical axis. The polishing is performed while varying a rotation speed of the substrate and a moving speed of the polishing brush such that the rotation speed of the substrate decreases stepwise or continuously and the moving speed of the polishing brush in a radial direction of the substrate decreases stepwise or continuously as a distance from a center of rotation of the substrate measured in the radial direction of the substrate to a center of the polishing brush increases.

A precision squeegee grinder including a grinder assembly configured to grind an edge of a squeegee blade, a squeegee mounting assembly configured to hold the squeegee blade, a grinder assembly vertically alignable with respect to the squeegee mounting assembly, a latitudinal movement assembly connected to the grinder assembly, the latitudinal movement assembly configured to position the grinder assembly with respect to the squeegee blade in defined increments, a longitudinal movement assembly connected to the latitudinal movement, the longitudinal movement assembly configured to move the grinder assembly along a width of the squeegee blade, and a base assembly. The grinder assembly, the squeegee mounting assembly, the latitudinal movement assembly, and the longitudinal movement assembly are connected to the base assembly. The squeegee mounting assembly, the latitudinal movement assembly, and the longitudinal movement assembly enable triaxial alignment between the grinder assembly and the squeegee blade.

A precision squeegee grinder including a grinder assembly configured to grind an edge of a squeegee blade, a squeegee mounting assembly configured to hold the squeegee blade, a grinder assembly vertically alignable with respect to the squeegee mounting assembly, a latitudinal movement assembly connected to the grinder assembly, the latitudinal movement assembly configured to position the grinder assembly with respect to the squeegee blade in defined increments, a longitudinal movement assembly connected to the latitudinal movement, the longitudinal movement assembly configured to move the grinder assembly along a width of the squeegee blade, and a base assembly. The grinder assembly, the squeegee mounting assembly, the latitudinal movement assembly, and the longitudinal movement assembly are connected to the base assembly. The squeegee mounting assembly, the latitudinal movement assembly, and the longitudinal movement assembly enable triaxial alignment between the grinder assembly and the squeegee blade.

The substrate polishing system, according to an example embodiment, includes a plurality of polishing apparatuses configured to sequentially polish a substrate, and each of the polishing apparatuses includes a polishing platen polishing a substrate, a data collector collecting a signal generated in a polishing process of the substrate, a data analyzer detecting a thickness of a substrate by analyzing the collected signal, and a polishing endpoint detector determining a polishing endpoint of a substrate based on the detected thickness of a substrate, and the plurality of polishing apparatuses is configured to share data with each other, and based on a polishing order of a substrate, the data obtained from one polishing apparatus of the plurality of polishing apparatuses is configured to be reflected in a detection process of a substrate thickness detection of another polishing apparatus of the plurality of polishing apparatuses in next sequence.

A vehicular interior rearview mirror assembly includes a mounting portion, a mirror casing and a mirror reflective element. The reflective element includes a glass substrate having a planar front surface, a planar rear surface and a circumferential perimeter edge around a periphery of the glass substrate that extends across a thickness dimension separating the planar front surface from the planar rear surface. A front perimeter edge portion of the circumferential perimeter edge includes a rounded glass surface circumferentially around the periphery of the glass substrate, with the rounded glass surface at least partially spanning the thickness dimension of the glass substrate. The rounded glass surface has a radius of curvature of at least 2.5 mm. The planar rear surface of the glass substrate is coated with a coating. No portion of the mirror casing overlaps onto the rounded glass surface of the glass substrate.

The present disclosure provides a method of chemical mechanical polish operation and a chemical mechanical polish operation system. The method includes obtaining a first input parameter and a second input parameter, wherein the first input parameter is associated with an additive of a slurry, and the second input parameter is associated with a characteristic of a process apparatus, determining an output parameter associated with the process apparatus based on the first input parameter and the second input parameter, securing a workpiece by a head over a platen in the process apparatus, supplying the slurry with the additive over the platen with the additive configured with the first parameter, and polishing a surface of the workpiece by operating the process apparatus configured with the output parameter.

An apparatus includes a first metrology tool configured to measure an initial thickness of a wafer. The apparatus includes a controller connected to the first metrology tool and configured to calculate a polishing time based on a material removal rate, a predetermined thickness and the initial thickness of the wafer. The apparatus includes a polishing tool connected to the controller and configured to polish the wafer for a first duration equal to the polishing time. The apparatus includes a second metrology tool connected to the controller and configured to measure a polished thickness. The controller is configured for receiving the initial thickness from the first metrology tool and the polished thickness from the second metrology tool, updating the material removal rate based on the predetermined thickness, the polishing time and the polished thickness, and calculating an etching time for etching the polished wafer using the polished thickness.

An apparatus includes a first metrology tool configured to measure an initial thickness of a wafer. The apparatus includes a controller connected to the first metrology tool and configured to calculate a polishing time based on a material removal rate, a predetermined thickness and the initial thickness of the wafer. The apparatus includes a polishing tool connected to the controller and configured to polish the wafer for a first duration equal to the polishing time. The apparatus includes a second metrology tool connected to the controller and configured to measure a polished thickness. The controller is configured for receiving the initial thickness from the first metrology tool and the polished thickness from the second metrology tool, updating the material removal rate based on the predetermined thickness, the polishing time and the polished thickness, and calculating an etching time for etching the polished wafer using the polished thickness.

A processing device that alleviates the influence of rough grinding and performs fine grinding and processes the work with a satisfactory precision. An index table includes a plurality of chucks for holding a work and transports the work to a rough grinding stage with a rough grinding means for rough grinding the work, a medium grinding stage with a medium grinding means for medium grinding the work, and a fine grinding stage with a fine grinding means for fine grinding the work. A first column extends over the index table and one of the rough grinding means or the fine grinding means is installed. A second column extends over the index table and is independent from the first column, and the medium grinding means is installed and the other one of the rough grinding means or the fine grinding means is arranged parallel to the medium grinding means.

A processing device that alleviates the influence of rough grinding and performs fine grinding and processes the work with a satisfactory precision. An index table includes a plurality of chucks for holding a work and transports the work to a rough grinding stage with a rough grinding means for rough grinding the work, a medium grinding stage with a medium grinding means for medium grinding the work, and a fine grinding stage with a fine grinding means for fine grinding the work. A first column extends over the index table and one of the rough grinding means or the fine grinding means is installed. A second column extends over the index table and is independent from the first column, and the medium grinding means is installed and the other one of the rough grinding means or the fine grinding means is arranged parallel to the medium grinding means.