A bonded abrasive wheel is disclosed comprising a plurality of abrasive particles disposed in a binder, a first grinding surface, a second surface opposing the first grinding surface, and an outer circumference. The wheel comprises a rotational axis extending through a central hub and a circuit configured as a Radio Frequency Identification (RFID) unit coupled to the abrasive wheel. The circuit comprises an antenna configured to communicate with one or more external devices and comprising a first end and a second end, wherein antenna has a radius of curvature about an axis along at least a portion thereof such that the first end is disposed adjacent to but is spaced from the second end, and an integrated circuit (IC) operably coupled to the antenna and configured to store at least a first data.

A method for modifying the mechanical and surface properties of a component. The method involves: removably attaching a component to at least one component support that is located within a vibratory trough of a component treatment apparatus, the at least one component support being a support shaft upon which the component is removably mountable within the vibratory trough; supplying the vibratory trough with treatment media; moving the component support or the vibratory trough so that the component is immersed into the treatment media; vibrating the vibratory trough to provide a substantially uniform surface treatment of the component, the vibratory trough being movable by at least one trough vibrating mechanism whose actuation is controlled by a controller in response to signals received from at least one sensor located on or within the vibratory trough; removing the component from the treatment media; and detaching the component from the component support.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Provided are a silver article formed using pure silver, which has high Vickers hardness and prohibits the occurrence of metal corrosion and the occurrence of discoloration; and its method. Disclosed are a silver article and its method, wherein the Vickers hardness is adjusted to 60 HV or higher, and when the height of the peak of 2θ=38°±0.2° by an XRD is designated as h1, and that of 2θ=44°±0.4° is designated as h2, h2/h1 is adjusted to 0.2 or greater.

The present disclosure describes a method and apparatus to remove consumable (e.g., sacrificial) polishing pad layers from a multilayer polishing pad. For example, the method includes measuring a thickness profile of a top polishing pad layer of a multilayer polishing pad and comparing the thickness profile to a threshold. The method, in response to the thickness profile being above the threshold, rinses the top polishing pad layer of the multilayer polishing pad and removes, after the top polishing pad layer has been rinsed, the top polishing pad layer to expose an underlying polishing pad layer of the multilayer polishing pad.

The objective of the present invention is to provide a deburring control device capable of easily identifying the cause of a deburring failure. A deburring control device according to one aspect of the present disclosure controls deburring processing for removing burrs on a workpiece by moving a deburring tool along a ridge line of the workpiece by means of a robot, and is provided with: an offset amount calculating unit for calculating an offset amount between the actual path of the robot and a taught path thereof; a pressing force acquiring unit for acquiring the pressing force of the deburring tool; a rotational speed acquiring unit for acquiring the rotational speed of the deburring tool; a failure detecting unit for detecting a deburring failure, in which the deburring processing could not be performed appropriately, on the basis of the offset amount, the pressing force, and the rotational speed; and a recording unit for recording a failure reason, which is the reason for the failure detecting unit determining the deburring failure, when the deburring failure is detected.

The present invention provides an abrasive comprising α-alumina particles having a polyhedral crystal structure, wherein the α-alumina particles have an average diameter (D50) of 300 nm to 10 μm and a bulk density of 0.2-0.5 g/mL, a [0001] face in the crystal structure of the α-alumina particles occupies 10-20% on the basis of the total crystal face area, and the amount of α-alumina particles is 85-100 wt % on the basis of the total weight. The abrasive of the present invention comprises α-alumina particles satisfying predetermined particle size and density ranges while having a polyhedral crystal structure, and thus provides excellent dispersibility in a polishing slurry to enable a polishing rate to increase, while minimizing scratch formation during polishing.

Provided is a double-sided polishing method of a wafer in which the wafer, which has been set in a wafer loading hole of the carrier, is compressed and held along with the carrier with an upper platen and a lower platen and the upper platen and the lower platen are rotated while supplying slurry to the wafer. The method includes: previously measuring an inclination value of a main surface of each of a plurality of carriers in the vicinity of the edge of the wafer loading hole; selecting, from among the plurality of carriers, those for which the inclination value is equal to or smaller than a threshold based on the measurement results of the inclination value; and applying the double-sided polishing to a wafer using the selected carrier.

Provided is a double-sided polishing method of a wafer in which the wafer, which has been set in a wafer loading hole of the carrier, is compressed and held along with the carrier with an upper platen and a lower platen and the upper platen and the lower platen are rotated while supplying slurry to the wafer. The method includes: previously measuring an inclination value of a main surface of each of a plurality of carriers in the vicinity of the edge of the wafer loading hole; selecting, from among the plurality of carriers, those for which the inclination value is equal to or smaller than a threshold based on the measurement results of the inclination value; and applying the double-sided polishing to a wafer using the selected carrier.