A substrate processing apparatus which reliably prevents a cleaning liquid containing foreign particles from falling from a polishing head onto a substrate is disclosed. The substrate processing apparatus includes a rotating and holding mechanism, a polishing head, and a head cleaning device configured to supply the cleaning liquid to the polishing head to clean the polishing head during polishing and/or after polishing of the substrate.

A substrate processing apparatus includes a polishing section and a transport section. The polishing section has a first polishing unit, a second polishing unit, and a transport mechanism. The first polishing unit has a first polishing apparatus and a second polishing apparatus. The second polishing unit has a third polishing apparatus and a fourth polishing apparatus. Each of the first to fourth polishing apparatuses has a polishing table to which a polishing pad is mounted, a top ring, and auxiliary units that perform a process on the polishing pad during polishing. Around the polishing table, a pair of auxiliary unit mounting units for mounting the respective auxiliary units in a left-right switchable manner with respect to a straight line connecting a swing center of the top ring and a center of rotation of the polishing table is provided at respective positions symmetrical with respect to the straight line.

An apparatus of cleaning a polishing pad includes: a first gas nozzle for spraying gas onto the pores of the polishing pad; and a first liquid nozzle for spraying a liquid to the pores of the polishing pad.

A chemical mechanical polishing (CMP) apparatus is provided, including a polishing pad and a polishing head. The polishing pad has a polishing surface. The polishing head is configured to hold a wafer in contact with the polishing surface during the polishing process. The polishing head includes a retaining ring, at least one fluid channel, and a vacuum pump. The retaining ring is arranged along the periphery of the polishing head and configured to retain the wafer. The at least one fluid channel is provided inside the polishing head, wherein the retaining ring includes a bottom surface facing the polishing surface and a plurality of holes in fluid communication with the bottom surface and the at least one fluid channel. The vacuum pump is fluidly coupled to the at least one fluid channel.

An apparatus for the robot-assisted machining of surfaces is described. In accordance with one embodiment, the device comprises the following: a support which can be mounted on a manipulator, a machining device with a tool (e.g. a grinding disc) and a linear actuator for adjusting the relative position of a tool in relation to the support. The apparatus further has a maintenance unit comprising a swiveling bracket. The bracket is swivel-mounted on the support such that, by swiveling the bracket, the maintenance unit can be positioned at least partially before the tool.

An apparatus for the robot-assisted machining of surfaces is described. In accordance with one embodiment, the device comprises the following: a support which can be mounted on a manipulator, a machining device with a tool (e.g. a grinding disc) and a linear actuator for adjusting the relative position of a tool in relation to the support. The apparatus further has a maintenance unit comprising a swiveling bracket. The bracket is swivel-mounted on the support such that, by swiveling the bracket, the maintenance unit can be positioned at least partially before the tool.

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

Feed rate scheduling methods include measuring a topography of a grinding wheel of a machine tool, calculating a topography parameter using the topography, and calculating a feed rate scheduling parameter for a toolpath of the grinding wheel based on the topography parameter. The topography may be measured using microscopy. The topography parameter may include a plurality of parameters including a density of crystals at a given depth (C(h)) of the grinding wheel and/or an area fraction of crystals protruding at a given depth (α(h)) of the grinding wheel. The feed rate scheduling parameter may include a grinding wheel feed rate, a grinding wheel spin rate, and/or a grinding wheel cutting depth, among other parameters.

A dressing device for profiling and sharpening a grinding tool includes a rotatable sharpening tool and a rotatable profiling tool axially offset from and settable relative to the rotatable sharpening tool. In one embodiment, the rotatable sharpening tool and the rotatable profiling tool have a common rotational axis, and the tools are settable along the common rotational axis. In another embodiment, a profiling tool axis of rotation is parallel to a sharpening tool axis of rotation. A method for dressing a grinding tool is also disclosed. The method includes profiling and sharpening the grinding tool with a single dressing device having a rotatable profiling tool with a first feed rate and a first advancement rate, and a rotatable sharpening tool with a second feed rate and a second advancement rate. The two feed rates or the two advancement rates are different.

An apparatus of cleaning a polishing pad includes: a first gas nozzle for spraying gas onto the pores of the polishing pad; and a first liquid nozzle for spraying a liquid to the pores of the polishing pad.