There is provided a cutting apparatus that cuts a workpiece by a cutting blade. The cutting apparatus includes a chuck table that holds a board in which a groove is formed through cutting of the board by the cutting blade, a cutting unit having a spindle and a mount flange that is fixed to a tip part of the spindle and on which the cutting blade is mounted, and a replacement apparatus that replaces the cutting blade mounted on the mount flange with the cutting blade stored in a blade storing part and replaces the board placed on the chuck table with the board stored in a board storing part. The replacement apparatus includes a holding part that holds the cutting blade and the board under suction.

There is provided a cutting apparatus that cuts a workpiece by a cutting blade. The cutting apparatus includes a chuck table that holds a board in which a groove is formed through cutting of the board by the cutting blade, a cutting unit having a spindle and a mount flange that is fixed to a tip part of the spindle and on which the cutting blade is mounted, and a replacement apparatus that replaces the cutting blade mounted on the mount flange with the cutting blade stored in a blade storing part and replaces the board placed on the chuck table with the board stored in a board storing part. The replacement apparatus includes a holding part that holds the cutting blade and the board under suction.

Embodiments herein generally relate to chemical mechanical polishing (CMP) systems and methods for reducing non-uniform material removal rate at or near the peripheral edge of a substrate when compared to radially inward regions therefrom. In one embodiment, a polishing system includes a substrate carrier comprising an annular retaining ring which is used to surround a to-be-processed substrate during a polishing process and a polishing platen. The polishing platen includes cylindrical metal body having a pad-mounting surface. The pad-mounting surface comprises a plurality of polishing zones which include a first zone having a circular or annular shape, a second zone circumscribing the first zone, and a third zone circumscribing the second zone. A surface of the second zone is recessed from surfaces of the first and third zones adjacent thereto, and a width of the second zone is less than an outer diameter of the annular retaining ring.

The present invention relates to a technique of determining a time to replace a polishing pad used in a polishing apparatus for polishing a workpiece, such as wafer, substrate, or panel. A polishing apparatus (1) includes: a polishing table (5) configured to support a polishing pad (2); a polishing head (7) configured to press a workpiece (W) against a polishing surface (2a) of the polishing pad (2); a dresser (40) configured to dress the polishing surface (2a) of the polishing pad (2); a detection sensor (60) configured to detect friction between the dresser (40) and the polishing pad (2), the detection sensor (60) being fixed to the dresser (40); and a wear monitoring device (63) configured to determine a wear index value from a plurality of output values of the detection sensor (60) and generate an alarm signal when the wear index value is smaller than a predetermined lower limit.

A grinding apparatus and a method for manufacturing a semiconductor device using the same are provided. A griding apparatus includes a chuck unit configured to receive a substrate, a grinding unit on a part of the chuck unit and configured to grind the substrate, and a dressing unit under a part of the grinding unit adjacent to the chuck unit and including a dressing board configured to dress the grinding unit and magnets under the dressing board.

The present invention provides an automated system for exchanging polish plate, comprising a loading chamber to store polish plates ready for use, and the automated system has a mechanical arm to pick up and place polish plates between a test chamber and the loading chamber. The present invention realizes automated exchange of polish plates.

The present invention provides an automated system for exchanging polish plate, comprising a loading chamber to store polish plates ready for use, and the automated system has a mechanical arm to pick up and place polish plates between a test chamber and the loading chamber. The present invention realizes automated exchange of polish plates.

A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.

A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around a plurality of grooved rollers, the wire being fed from one of a pair of wire reels and taken up by another, the method including feeding a workpiece to the row for slicing while allowing the wire to reciprocate and travel in an axial direction, thereby slicing the workpiece at a plurality of positions aligned in an axial direction of the workpiece simultaneously. Prior to slicing, an abrasive-grain abrading step wherein the wire is allowed to travel without slicing the workpiece, allowing the wire to rub against itself within the reels, and dressing its surface for 30 minutes or more. The method can dress a fixed abrasive grain wire at low cost and suppress thickness unevenness of wafers.

A chemical mechanical polishing apparatus is provided. The chemical mechanical polishing apparatus includes a polishing pad, a pad conditioner, a measurement tool, and a controller. The polishing pad is provided in a processing chamber for polishing a wafer placed on the polishing surface of the polishing pad. The pad conditioner is configured to condition the polishing surface. The measurement tool is provided in the processing chamber and configured to measure the downward force of the pad conditioner. The controller is coupled to the pad conditioner and the measurement tool, and is configured to adjust the downward force of the pad conditioner in response to an input from the measurement tool.