This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.

In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.

A polishing method of polishing a substrate while preventing coarse particles from being discharged onto a polishing pad is disclosed. In this polishing method, a substrate is brought into sliding contact with a polishing pad while a polishing liquid, which has passed through a filter, is supplied onto the polishing pad. The polishing method includes: passing the polishing liquid through the filter while increasing a physical quantity of the polishing liquid until the physical quantity reaches a predetermined set value, the physical quantity being one of flow rate and pressure of the polishing liquid; and polishing the substrate W on the polishing pad while supplying the polishing liquid that has passed through the filter onto the polishing pad.

A polishing method of polishing a substrate while preventing coarse particles from being discharged onto a polishing pad is disclosed. In this polishing method, a substrate is brought into sliding contact with a polishing pad while a polishing liquid, which has passed through a filter, is supplied onto the polishing pad. The polishing method includes: passing the polishing liquid through the filter while increasing a physical quantity of the polishing liquid until the physical quantity reaches a predetermined set value, the physical quantity being one of flow rate and pressure of the polishing liquid; and polishing the substrate W on the polishing pad while supplying the polishing liquid that has passed through the filter onto the polishing pad.

In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.

A polishing agent regenerating method in which a component of a polished material is removed from polishing agent slurry and a polishing agent is collected and regenerated is shown. The method includes at least, polishing, polishing agent slurry supplying, polishing agent slurry collecting, and sedimenting/separating/concentrating, performed in the above order. In the polishing agent slurry collecting or the sedimenting/separating/concentrating, a K.sub.2O density in the polishing agent slurry after dilution by water is performed is to be within a range of 0.002-0.2 mass %.

A semiconductor wafer is adhered and fixed to a polishing head by means of a conductive adhesive, and the wafer is connected to a positive electrode of an external power supply through wires of the inner and outer rings of a conductive slip ring below the wafer. A polishing pad is adhered to the bottom of a counter electrode disc, the counter electrode disc is fixed at the bottom of a polishing disc and is processed with through holes at the position corresponding to the polishing disc, and the counter electrode disc is connected to a negative electrode of the external power supply through the wires of inner and outer rings of a conductive slip ring above the counter electrode disc. Ultraviolet light emitted by an ultraviolet light source can reach the surface of the wafer through the through holes, and a polishing solution can be sprayed through the through holes into a contact area between the wafer and the polishing pad.

An apparatus for recirculating fluids in semiconductor systems. The apparatus including a base portion, an inlet portion coupled to a first end of the base portion, and a nozzle coupled to a second end of the base portion. The nozzle including a helical groove extending from a position near a nozzle base portion to a position near a tip of the nozzle portion. The helical groove extending from an exterior surface through the nozzle portion to an interior surface of the nozzle portion. Methods of using the apparatus in a semiconductor recirculation system are also disclosed.

A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.

A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.