Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.

Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

A slurry and/or chemical blend supply apparatus suitable for providing slurry and/or chemical blend to chemical mechanical planarization (CMP) tools or other tools in a semiconductor fabrication facility, related processes, methods of use and methods of manufacture. The slurry and/or chemical blend supply apparatus includes one or more of the following: feed module, blend module, analytical module and distribution module.

The disclosure features a system that includes a plurality of material tanks, each of which includes at least one material for forming a chemical composition and includes a first recirculation loop; at least one mixing tank in which the materials from the material tanks are mixed to form a chemical composition, the mixing tank including a second recirculation loop; and at least one holding tank configured to continuously receive the chemical composition from the mixing tank, the holding tank including a third recirculation loop. The system may further include a plurality of fluid flow controller units and be configured to form material and chemical composition flows in an in-process steady state.

The disclosure features a system that includes a plurality of material tanks, each of which includes at least one material for forming a chemical composition and includes a first recirculation loop; at least one mixing tank in which the materials from the material tanks are mixed to form a chemical composition, the mixing tank including a second recirculation loop; and at least one holding tank configured to continuously receive the chemical composition from the mixing tank, the holding tank including a third recirculation loop. The system may further include a plurality of fluid flow controller units and be configured to form material and chemical composition flows in an in-process steady state.

A polishing apparatus includes a polishing table supplied with liquid on a upper surface and rotating around a central axis, a liquid receiver having an annular shape and disposed below a peripheral portion of the polishing table, and a drain member having a tubular shape, attached to a peripheral portion of the polishing table, and including a lower end portion extending toward the liquid receiver.

A polishing apparatus includes a polishing table supplied with liquid on a upper surface and rotating around a central axis, a liquid receiver having an annular shape and disposed below a peripheral portion of the polishing table, and a drain member having a tubular shape, attached to a peripheral portion of the polishing table, and including a lower end portion extending toward the liquid receiver.

A grinding apparatus includes a holding unit including a holding table having a holder for holding a workpiece and a grinding water suction part for drawing in grinding water outside of the holder, a rotational shaft having an end fixed centrally to a bottom surface of the holding table, a tubular rotary joint surrounding the rotational shaft, and a motor rotating the rotational shaft about its own axis. The rotational shaft has a first suction channel held in fluid communication with the holder of the holding table and a second suction channel held in fluid communication with the grinding water suction part. The rotary joint has a communication channel by which the first suction channel and the second suction channel are held in fluid communication with at least a suction source.