The technology relates to an integrated circuit (IC) package. The IC package may include a substrate. An IC die may be mounted to the substrate. One or more photonic modules may be attached to the substrate and one or more serializer/deserializer (SerDes) interfaces may connect the IC die to the one or more photonic modules. The IC die may be an application specific integrated circuit (ASIC) die and the one or more photonic modules may include a photonic integrated circuit (PIC) and fiber array. The one or more photonic modules may be mounted to one or more additional substrates which may be attached to the substrate via one or more sockets.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength Ac shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength .sub.c shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

A light emitter that operates through a display may cause display artifacts, even when the light emitter operates using non-visible wavelengths. Display artifacts caused by a light emitter that operates through a display may be referred to as emitter artifacts. To mitigate emitter artifacts, a display pixel that overlaps the light emitter may include a transistor that provides a current sink to divert leakage current away from the light-emitting diode in that pixel. A shielding layer may be interposed between the light emitter and a display pixel. The shielding layer may block light from the light emitter. The shielding layer may have an opening that exposes one transistor in the pixel to the light from the light emitter. Pixels that overlap the light emitter may have larger anodes than pixels that do not overlap the light emitter.

According to an aspect, a detection device includes: an optical sensor; a first light source configured to emit first light to the optical sensor; a second light source configured to emit second light different from the first light to the optical sensor; and a detection circuit configured to acquire a first detection value when the first light is emitted to the optical sensor and a second detection value when the second light is emitted to the optical sensor. A light emission period of the second light source is relatively shorter than a light emission period of the first light source.

An optoelectronic device including at least an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode, a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element. The emissive component and the photodetector component are superimposed one above the other, and the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.

In part, in one aspect, the disclosure relates to a system including a photonic integrated circuit (PIC) assembly, comprising a PIC comprising: a first bond pad disposed inward from an edge of the PIC a first distance; and a first wire having a first length, the first wire electrically connected to the first bond pad and extending therefrom, wherein the first distance is greater than 0.4 mm.

In part, in one aspect, the disclosure relates to a system including a photonic integrated circuit (PIC) assembly, comprising a PIC comprising: a first bond pad disposed inward from an edge of the PIC a first distance; and a first wire having a first length, the first wire electrically connected to the first bond pad and extending therefrom, wherein the first distance is greater than 0.4 mm.

The present invention relates to an integration method for a modularized silicon-based heterogeneous photoelectric integrated architecture. According to the integration method, a modularized form is adopted, different functional units are used as individual unit modules, and then different types of integrated architectures are formed through customized increase and decrease in different usage scenarios. Among them, customized combinations of one unit module, two unit modules up to five unit modules can be adopted to construct up to 22 types of module-combined integrated architectures. By adopting a modularized solution, various functional materials can be easily selected and combined, thus improving a degree of freedom of integration and reducing costs.

The present invention relates to an integration method for a modularized silicon-based heterogeneous photoelectric integrated architecture. According to the integration method, a modularized form is adopted, different functional units are used as individual unit modules, and then different types of integrated architectures are formed through customized increase and decrease in different usage scenarios. Among them, customized combinations of one unit module, two unit modules up to five unit modules can be adopted to construct up to 22 types of module-combined integrated architectures. By adopting a modularized solution, various functional materials can be easily selected and combined, thus improving a degree of freedom of integration and reducing costs.