A semiconductor relay module includes: first and second semiconductor relays; and first to third input terminals and first and second output terminals that are exposed from a housing. The first semiconductor relay includes a first optocoupler and a first switch, and the second semiconductor relay includes a second optocoupler and a second switch. The first switch and the second switch are connected by an output connecting line, the third input terminal is connected to an input connecting line, and the input connecting line and the output connecting line are covered by the housing.

A semiconductor relay module includes: first and second semiconductor relays; and first to third input terminals and first and second output terminals that are exposed from a housing. The first semiconductor relay includes a first optocoupler and a first switch, and the second semiconductor relay includes a second optocoupler and a second switch. The first switch and the second switch are connected by an output connecting line, the third input terminal is connected to an input connecting line, and the input connecting line and the output connecting line are covered by the housing.

A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

According to an aspect, a detection device includes: a light source configured to emit light that includes a first wavelength band and a second wavelength band; a first color filter configured to transmit light in the first wavelength band; a second color filter configured to transmit light in the second wavelength band; a first photodiode configured to receive light transmitted through the first color filter; and a second photodiode configured to receive light transmitted through the second color filter.

According to an aspect, a detection device includes: a light source configured to emit light that includes a first wavelength band and a second wavelength band; a first color filter configured to transmit light in the first wavelength band; a second color filter configured to transmit light in the second wavelength band; a first photodiode configured to receive light transmitted through the first color filter; and a second photodiode configured to receive light transmitted through the second color filter.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

Embodiments disclosed herein include optical communication modules and optoelectronic packages. In an embodiment, an optical communication module comprises a substrate, a transistor over the substrate, an array of micro light emitting diodes (LEDs) over the transistor, and a connector over the array of micro LEDs.

Embodiments disclosed herein include optical communication modules and optoelectronic packages. In an embodiment, an optical communication module comprises a substrate, a transistor over the substrate, an array of micro light emitting diodes (LEDs) over the transistor, and a connector over the array of micro LEDs.

The present disclosure provides a visible light communication device, a display substrate, a display device, and a manufacturing method of the display substrate. The visible light communication device includes: a protrusion structure arranged on a base substrate and protruding toward a photosensitive side of the visible light communication device; a first electrode covering the protrusion structure; a visible light sensing layer arranged at a side of the first electrode away from the protrusion structure; and a second electrode arranged at a side of the visible light sensing layer away from the first electrode. A surface of each of the first electrode, the visible light sensing layer and the second electrode away from the base substrate is provided with a protrusion facing the photosensitive side of the visible light communication device due to the protrusion structure.