A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.

A thermoelectric device comprising an elongated panel, formed of a thermally insulating material, and having a plurality of thermoelectric elements comprising compacted conductors inside the insulating material and expanded conductors outside the insulating material is combined with other layers for leakage current interception, bodily fluid absorption, and pillars that preserve pressure re-distribution. The thermoelectric device may be integrated into a variety of surfaces or enclosures needing heating or cooling and manufactured using pre-existing automated equipment.

A temperature adjustment apparatus suppresses decline in temperature adjustment performance by avoiding even partial impairment of the function of a thermoelectric module in respective zones, which is accomplished due to the presence of terminals. A terminal is provided via an electrode extension section on a heat exchange plate side electrode of the thermoelectric module of inner zones apart from an outermost zone, of four zones. The electrode extension section is disposed at a position which is sandwiched between adjacent thermoelectric elements and over which a temperature adjustment side electrode spans. The terminals are disposed outside the thermoelectric module in the outermost zone.

Thermoelectric devices are provided. In one embodiment, a thermoelectric device may include a glass wafer defined by conductive vias, a second wafer, and a plurality of metal film disposed between the glass wafer and the second wafer and against solid, conductive, integral, end surfaces of the conductive vias. A nanogap may be disposed between the metal film and the second wafer. The nanogap may have been created by applying a voltage extending between the conductive vias and the second wafer. Methods of forming the devices, along with methods of using the devices to transform heat energy to electricity, and for refrigeration, are also provided.

The disclosed apparatus cools a drinking liquid utilizing the Peltier effect, and optionally includes a system of gasification for gasifying the drinking liquid, once cooled. The cooling system in turn includes: a first cooling circuit, in which an operating fluid circulates, associated with a hot side of a Peltier cell; and a second cooling circuit, in which the drinking liquid circulates, associated with a cold side of the Peltier cell. The Peltier cell is integrated in a cooling unit exhibiting a special sandwich structure which integrates, as well as the Peltier cell, a first and a second heat exchanger, apt respectively to exchange directly the heat between the operating fluid which circulates in the first cooling circuit and the hot side of the Peltier cell and between the drinking liquid which circulates in the second cooling circuit and the cold side of the Peltier cell to cool the drinking liquid.

According to some embodiments, a thermoelectric system includes a thermoelectric device having a first surface and a second surface and a power source configured to deliver a voltage across the thermoelectric device to selectively activate or deactivate the thermoelectric device, wherein the first surface is configured to heat and the second surface is configured to cool when the thermoelectric device is activated. The system further includes a processor configured to determine a potential between the first surface and the second surface when the thermoelectric device is deactivated, correlate the potential to a temperature of the first surface and adjust the correlated temperature of the first surface based on an ambient temperature.

A method of setting a supply voltage in a device is disclosed. The method includes receiving a first plurality of inputs from a plurality of sensors that are representative of a gate delay of a signal path on the device, and receiving a second plurality of inputs from a plurality of temperature sensors. The method further includes estimating a plurality of interconnect delays for the signal path based on the second plurality of inputs, and determining the supply voltage for the signal path based on the first plurality of inputs and the plurality of interconnect delays.

An improved method and apparatus for thermal-to-electric conversion involving relatively hot and cold juxtaposed surfaces separated by a small vacuum gap wherein the cold surface provides an array of single charge carrier converter elements along the surface and the hot surface transfers excitation energy to the opposing cold surface across the gap through Coulomb electrostatic coupling interaction.

[Object] To increase the degree of freedom in designing a system for taking out power from a temperature gradient in terms of a thermoelectric conversion element or a thermoelectric conversion device. [Means for Achieving Object] A thermal spin-wave spin current generating member made of a magneto-dielectric body is provided with an inverse spin Hall effect member, a temperature gradient is provided in the above-described thermal spin-wave spin current generating member in the direction of the thickness, and at the same time a magnetic field is applied to the above-described inverse spin Hall effect member in the direction perpendicular to the longitudinal direction and perpendicular to the direction of the above-described temperature gradient by means of a magnetic field applying means so that a thermal spin-wave spin current is converted to a voltage which is taken out in the above-described inverse spin Hall effect member.

A solid state energy generator and storage device, comprising two layers, in contact with each other, of dissimilar materials in terms of electron density and configuration, sandwiched between an anode and a cathode. One of the layers is a stabilized mixture of carbon and an ionic material (carbon matrix) and the other layer is a stabilized manganese oxide mixed with an ionic material (oxide matrix). The built-in potential of the device is determined mathematically by integrating the electrostatic forces across the barrier and will rise or fall in direct proportion to the device temperature (in Kelvin). In addition the device can be charged and thus function as a charge storage device, with the rated voltage varying according to the temperature of the device. When a load is attached across the terminals of the device a current flows.