Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a correlated electron material. In embodiments, processes are described which may be useful for avoiding a resistive layer which tends to form between the correlated electron material and a conductive substrate and/or overlay.

A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.

Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Disclosed are systems and methods for a quantum-analogue computing bit array consisting of a single qubit analogue, a serial two qubit analogue coupling, or parallel N qubit analogues. The quantum-analogue computing bit array comprises an elastic media having photo-elastic and photo-expansion effects, the adjustment of which allows a manipulation of one or more structural degrees of freedom within the elastic media and one or more temporal degrees of freedom within the elastic media. At least one analogue qubit is defined by one or more elastic waves within the elastic media. The quantum-analogue computing bit array further comprises a modulated light source oriented to illuminate the elastic media with a laser radiation to achieve a non-separable multi-phonon superposition of states within the elastic media.

Disclosed is a transceiver that includes a three-dimensional array of Josephson junctions. When transmitting, the junctions drive an array of micro-antennas. When receiving, the micro-antennas drive the array of Josephson junctions. By extending the junction array into the third dimension, this transceiver packages a large number of Josephson junctions into a small volume, thus increasing the power of a transmitted beam. Multiple different micro-antenna arrays can be included, thus allowing the transceiver to work efficiently at multiple frequency ranges.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.

Dynamic random access memory (DRAM) and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming an interlayer dielectric layer over the base substrate; forming an opening passing through the interlayer dielectric layer; and forming a memory structure, having a first conductive layer, a memory medium layer on the first conductive layer, and a second conductive layer on the memory medium layer, in the opening.

Subject matter disclosed herein may relate to programmable current for correlated electron switches.