Subject matter disclosed herein may relate to devices formed from correlated electron material.

Provided is a secondary battery being superior to a conventional secondary battery with respect to volume (energy density) and manufacturing (manufacturing workload). The present invention provides a secondary battery including a sheet-shaped first-electrode-functioning base material having a function as a first electrode and a function as a base material, a front-side storage layer formed on a front side of the first-electrode-functioning base material, a front-side second electrode layer layered on the front-side storage layer, a rear-side storage layer formed on a rear side of the first-electrode-functioning base material, and a rear-side second electrode layer layered on the rear-side storage layer.

Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a correlated electron material. In embodiments, processes are described which may be useful for avoiding a resistive layer which tends to form between the correlated electron material and a conductive substrate and/or overlay.

The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

The present invention provides a quantum dot light emitting element, a manufacture method thereof and a liquid crystal display device. The quantum dot light emitting element comprises a substrate, an anode, a Hole Injection and Hole Transporting Layer, a quantum dot light emitting layer, an Electron Injection and Electron Transporting layer and a cathode, and the anode is located on the substrate, and the anode and the cathode are located at the same side of the substrate, and are opposite and separately located, and the Hole Injection and Hole Transporting Layer, the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer are sequentially sandwiched between the anode and the cathode, and one surface of the Hole Injection and Hole Transporting Layer is connected with the anode, wherein the Electron Injection and Electron Transporting layer comprises water/alcohol soluble conjugated polymer.

IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.

Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.

A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. The method comprises arranging an emitting element at the support structure, the emitting element being configured to emit a thermal radiation of the emitter, wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate.

Subject matter disclosed herein may relate to programmable current for correlated electron switches.

The generation of photocurrent in an ideal two-dimensional Dirac spectrum is symmetry forbidden. In sharp contrast, a three-dimensional Weyl semimetal can generically support significant photocurrent due to the combination of inversion symmetry breaking and finite tilts of the Weyl spectrum. To realize this photocurrent, a noncentrosymmetric Weyl semimetal is coupled to a pair of electrodes and illuminated with circularly polarized light without any voltage applied to the Weyl semimetal. The wavelength of the incident light can range over tens of microns and can be adjusted by doping the Weyl semimetal to change its chemical potential.