The present invention provides an matter-wave transistor in which the flow of particles (e.g., atoms and molecules) through the transistor is a result of resonant tunneling from a source well, through a gate well and into a drain well (as opposed to being a result of collisions, as in a classical atomtronic transistor). The transistor current of matter-wave particles can be controlled as a function of the breadth of resonant tunneling conditions of the gate well. For example, the resonant tunneling conditions of a gate well that does not include a dipole-oscillating Bose-Einstein condensate (DOBEC) can be broadened by including a DOBEC in the gate well. Similarly, the breadth of resonant tunneling conditions of the gate well can be changed by changing the particle population of a DOBEC in the gate well.

Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.

A micromechanical moisture-sensor device and a corresponding manufacturing method. The micromechanical moisture-sensor device is equipped with a first electrode device situated on the substrate; a second electrode device situated on the substrate; an electrical insulation device situated between the first electrode device and the second electrode device which includes a first area, which is in contact with the first electrode device and the second electrode device, and which includes a second area, which is exposed by the first electrode device and the second electrode device; a moisture-sensitive functional layer, which is applied across the first electrode device and the second electrode device and the second area of the insulation device lying between them in such a way that it forms a moisture-sensitive resistive electrical shunt at least in some areas between the first electrode device and the second electrode device.

Techniques facilitating frequency allocation in multi-qubit circuits are provided. In one example, a computer-implemented method comprises determining, by a device operatively coupled to a processor, an estimated fabrication yield associated with respective qubit chip configurations by conducting simulations of the respective qubit chip configurations at respective frequency offsets; and selecting, by the device, a qubit chip configuration from among the respective qubit chip configurations based on the estimated fabrication yield associated with the respective qubit chip configurations.

A method comprises first generating a plane wave light beam. At least one orbital angular momentum is applied to the plane wave light beam to generate and OAM light beam. Transitions of electrons between quantized states within a semiconductor material are controlled responsive to the at least one orbital angular momentum applied to the plane wave light beam. The OAM light beam is transmitted at the semiconductor material to induce the transitions of the electrons between the quantize states within the semiconductor material.

A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

Disclosed is a transceiver that includes a three-dimensional array of Josephson junctions. When transmitting, the junctions drive an array of micro-antennas. When receiving, the micro-antennas drive the array of Josephson junctions. By extending the junction array into the third dimension, this transceiver packages a large number of Josephson junctions into a small volume, thus increasing the power of a transmitted beam. Multiple different micro-antenna arrays can be included, thus allowing the transceiver to work efficiently at multiple frequency ranges.

A device includes a plurality of optoelectronic gates. Each gate includes a nanowire, and a topological insulator coating the nanowire. The topological insulator is configured to isolate entanglement action of a nanoparticle in the nanowire, and an ion is coupled to the nanoparticle in the nanowire when the ion is photoactive.

In a weak link of two s-wave superconductors (SCs) coupled via a time-reversal-invariant (TRI) topological superconducting (TSC) island, a Josephson current can flow due to Cooper pairs tunneling in and out of spatially separated Majorana Kramers pairs (MKPs), which are doublets of Majorana bound states (MBSs). The sign of the resulting Josephson current is fixed by the joint parity of the four Majorana bound states that make up the MKPs on the TSC island. This parity-controlled Josephson effect can be used as a read-out mechanism for the joint parity in Majorana-based quantum computing. For a TSC island with four terminals, the SC leads can address a Majorana superconducting qubit (MSQ) formed by the charge ground states of the TSC island's terminals. Cooper pair splitting enables single-qubit operations, qubit read-out, as well as two-qubit entangling gates. Hence, TSC islands between SC leads may provide an alternative approach to superconducting quantum computation.

Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.