The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.

Surface treatment articles, systems for making/loading surface treatment articles, and methods of making surface treatment articles are described. In embodiments the surface treatment articles are configured to be impregnated or otherwise loaded with a surface treatment liquid that includes a carrier and an active agent. The carrier may be or include water, and the active agent may be or include dissolved ozone, ozone degradation products, and/or ozone reaction products. The surface treatment liquid may contain a threshold concentration of active agent for a residence time that is sufficient for desired cleaning, disinfecting, and/or polishing applications.

Surface treatment articles, systems for making/loading surface treatment articles, and methods of making surface treatment articles are described. In embodiments the surface treatment articles are configured to be impregnated or otherwise loaded with a surface treatment liquid that includes a carrier and an active agent. The carrier may be or include water, and the active agent may be or include dissolved ozone, ozone degradation products, and/or ozone reaction products. The surface treatment liquid may contain a threshold concentration of active agent for a residence time that is sufficient for desired cleaning, disinfecting, and/or polishing applications.

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Various embodiments disclosed relate to an abrasive sheet. The abrasive sheet includes a first layer including an abrasive major surface and an opposite second layer defining a second major surface. The second major surface includes a plurality of protrusions extending outwardly from the second major surface. The protrusions include a first polymer component having at least one of a Shore A hardness ranging from about 5 to about 100 and a Shore D hardness ranging from about 1 to about 70. The first layer and the second layer are directly joined to each other.

A method of removing material from a workpiece includes moving a coated abrasive over a receiving surface of a platen, the receiving surface having at least one opening configured for the flow of an ejection material therethrough, moving the platen and workpiece relative to each other to contact the coated abrasive to the workpiece and removing material from the workpiece, and controlling a flow pressure for the ejection material through the at least one opening during removing material from the workpiece, where the flow pressure of the ejection material can be adjusted based on at least one of the operation parameters such as a translation rate of the coated abrasive over the receiving surface, the weight of the coated abrasive, a material removal rate, a coefficient of friction between the coated abrasive and the platen, or a combination thereof.

A method of removing material from a workpiece includes moving a coated abrasive over a receiving surface of a platen, the receiving surface having at least one opening configured for the flow of an ejection material therethrough, moving the platen and workpiece relative to each other to contact the coated abrasive to the workpiece and removing material from the workpiece, and controlling a flow pressure for the ejection material through the at least one opening during removing material from the workpiece, where the flow pressure of the ejection material can be adjusted based on at least one of the operation parameters such as a translation rate of the coated abrasive over the receiving surface, the weight of the coated abrasive, a material removal rate, a coefficient of friction between the coated abrasive and the platen, or a combination thereof.

An apparatus and method for transferring particles by the use of a transfer tool to at least a portion of which is applied a vacuum to cause particles to jump from a particle source to the transfer tool.

An abrasive article comprises abrasive particles secured to a substrate by at least one binder material. The at least one binder material comprises a cured reaction product of components comprising: a) at least one phenolic resin; and b) an aqueous dispersion of at least one polyurethane, wherein, based on the total solids weight of components a) and b), the components comprise 56 to 91 percent by weight of component a) and 44 to 9 percent by weight of component b). Methods of making and using the abrasive articles are also disclosed.