Disclosed is an electronic device, which includes an external power supply unit configured to receive power from an external power source and an auxiliary power storage unit configured to be charged upon receiving the power from the external power supply unit and store the power. The electronic device further includes a first switching element connected to the external power supply unit and the auxiliary power storage unit, the first switching element configured to select any one of the external power supply unit and the auxiliary power storage unit as a power source, a power information receiver configured to receive power information including at least one of electric rate information and power demand information, and a controller configured to control the first switching element based on the power information received from the power information receiver.

A method for fabricating a semiconductor proximity sensor includes providing a flat leadframe with a first and a second surface. The second surface is solderable. The leadframe includes a first and a second pad, a plurality of leads, and fingers framing the first pad. The fingers are spaced from the first pad by a gap which is filled with a clear molding compound. A light-emitting diode (LED) chip is assembled on the first pad and encapsulated by a first volume of the clear compound. The first volume outlined as a first lens. A sensor chip is assembled on the second pad and encapsulated by a second volume of the clear compound. The second volume outlined as a second lens. Opaque molding compound fills the space between the first and second volumes of clear compound and forms walls rising from the frame of fingers to create an enclosed cavity for the LED. The pads, leads, and fingers connected to a board using a layer of solder for attaching the proximity sensor.

A photodetector is provided, including a plurality of optical signal detection units located at each of multiple pixels and configured to generate electric charges corresponding to light being received, and a switch transistor selectively turned on and off so as to transfer the electric charges generated through the plurality of optical signal detection units at each of the multiple pixels, wherein the plurality of optical signal detection units are connected to each other in series.

The present disclosure relates to a solid-state imaging element and an electronic device capable of effectively inhibiting occurrence of reflection and diffraction of light on a light incident surface. A fine uneven structure including a recess and a protrusion is formed with a predetermined pitch on a light incident surface of a semiconductor layer in which photoelectric conversion sections are formed for a plurality of pixels; and an antireflective film is laminated on the fine uneven structure, the antireflective film being formed with a film thickness different for each color of light received by each of the pixels. The pitch of one of the recess and protrusion formed in the fine uneven structure is generally identical in all the pixels, and is 100 nm or less. The present technology is applicable, for example, to a solid-state imaging element.

A light detecting device includes: an optical filter (2) that transmits a first wavelength light having a wavelength in a first wavelength range, a second wavelength light having a wavelength in a second wavelength range, . . . , and an n-th wavelength light having a wavelength in an n-th wavelength range (n is an integer); an optical sensor (3) that detects at least one of a first wavelength light intensity of the first wavelength light, a second wavelength light intensity of the second wavelength light, . . . , and an n-th wavelength light intensity of the n-th wavelength light; and an analysis unit (4) that estimates a light intensity of light having a wavelength in a wavelength range other than at least one of the first wavelength range, the second wavelength range, . . . , and the n-th wavelength range based on at least one of the first wavelength light intensity, the second wavelength light intensity, . . . , and the n-th wavelength light intensity. A correlative relationship exists between a light intensity of light having a wavelength in the at least one wavelength range and the light intensity of the light having the wavelength in the wavelength range other than the at least one wavelength range.

A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p.sup.-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p.sup.-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

A method of producing an integrated circuit-type active radioisotope battery, the method comprising exposing at least a portion of an electronically functional, unactivated integrated circuit-type battery to radiation to convert transmutable material in the unactivated battery to a radioisotope thereby producing an active cell and thus the integrated circuit-type active radioisotope battery.

A semiconductor device includes a substrate having a major surface and a thin film transistor on the substrate. The thin film transistor includes an oxynitride semiconductor layer, first and second conductive layers, a first gate electrode and a first insulating layer. The oxynitride semiconductor layer includes a first portion electrically connected to the first conductive layer, a second portion electrically connected to the second conductive layer, and a third portion provided between the first and second portions. The oxynitride semiconductor layer includes indium, gallium, zinc, and nitrogen, a nitrogen content of the oxynitride semiconductor layer being 2 atomic % or less, and a gallium content of the oxynitride semiconductor layer is more than the nitrogen content. The first gate electrode is separated from the third portion in a direction intersecting the first direction; and the first insulating layer is provided between the third portion and the first gate electrode.

A three dimensional integrated edgeless pixel detector apparatus can be implemented, which includes a multi-tiered three-dimensional detector having one sensor layer, and two ASIC layers comprising an analog tier and a digital tier configured for x-ray photon time of arrival measurement and Imaging. In a preferred embodiment, a hit processor can be implemented in association with a priority encoder and a configuration register and output serializer with mode selection.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.