A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

A manufacturing method is provided. A preform is arranged over a surface of an inner mold line. The preform is folded over sides of the inner mold line. An end of the preform is pressed into a grip strip coupled to a side of the inner mold line. The grip strip is translated in a first direction to tension the preform into a shaped body.

A manufacturing method is provided. A preform is arranged over a surface of an inner mold line. The preform is folded over sides of the inner mold line. An end of the preform is pressed into a grip strip coupled to a side of the inner mold line. The grip strip is translated in a first direction to tension the preform into a shaped body.

A manufacturing method is disclosed herein. The method includes arranging a preform over a surface of an inner mold line; folding the preform over sides of the inner mold line; pressing an end of the preform into a grip strip coupled to a side of the inner mold line; and applying pressure to the preform to force excess material of the preform into a forming bead of the inner mold line.

A manufacturing method is disclosed herein. The method includes arranging a preform with a plurality of clamping assemblies, the plurality of clamping assemblies disposed along ends of the preform; and forming the preform into a shaped body, the forming including incrementally tensioning the preform around a surface of an inner mold line using the plurality of clamping assemblies; and drawing the preform into a set of forming beads of the inner mold line.

A manufacturing method is disclosed herein. The method includes arranging a preform with a plurality of clamping assemblies, the plurality of clamping assemblies disposed along ends of the preform; and forming the preform into a shaped body, the forming including incrementally tensioning the preform around a surface of an inner mold line using the plurality of clamping assemblies; and drawing the preform into a set of forming beads of the inner mold line.

An apparatus for making and depositing bricks includes a nozzle having an inlet opening, an outlet opening, and a plurality of walls surrounding the outlet opening. At least one of the walls is configured to retract relative to the other walls. When a first brick is deposited, all of the nozzle walls are in the extended position. When subsequent bricks are deposited, one or more of the nozzle walls are retracted so that the form for the subsequent bricks is provided by the walls that are in the extended position and the sides of the already-deposited bricks. In this manner, the nozzle is configured to deposit the bricks directly adjacent to each other without any space or intervening material between them. The bricks may be deposited in a heated state and they meld together as they cool. The nozzle is particularly advantageous for paving autonomously in otherwise inaccessible locations, such as surfaces on the moon or other planets.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm.sup.3 and equal to or lower than 7.1 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

A sputtering target includes an indium cerium zinc oxide represented by In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10.sup.2 cm to about 10 cm. A weight percentage of crystalline In.sub.2Ce.sub.xZnO.sub.4+2x in the sputtering target is larger than 80%.