A tool holder with a main part, a deformable receiving portion for clamping a tool, and at least one blocking element which is designed to engage into a corresponding counter element on the tool in order to prevent the tool from moving axially out of the tool holder. The at least one blocking element is integrally formed with the receiving portion. A clamping system having such a tool holder and a method for producing a receiving portion for such a tool holder are also described.

A block, block system and method of making a wall block. A block with multiple embodiments of a visually exposed surface having three dimensional shaped areas and three dimensional angular valleys or joints that can be used to construct a patio, wall, fence or the like; the multiple embodiments creating a more random and natural appearance. A mold box having a moveable liner and a stripper shoe that impart three dimensional shaped areas and three dimensional angular valleys or joints onto an exposed surface of a block. The moveable liner and stripper shoe also impart a parting line onto the exposed surface of the block.

A block, block system and method of making a wall block. A block with multiple embodiments of a visually exposed surface having three dimensional shaped areas and three dimensional angular valleys or joints that can be used to construct a patio, wall, fence or the like; the multiple embodiments creating a more random and natural appearance. A mold box having a moveable liner and a stripper shoe that impart three dimensional shaped areas and three dimensional angular valleys or joints onto an exposed surface of a block. The moveable liner and stripper shoe also impart a parting line onto the exposed surface of the block.

Provided is a method for preparing a grain boundary insulation-type dielectric. The method includes the steps of obtaining a titanic acid compound and a ferroelectric having a value less than a melting point of the titanic acid compound; obtaining a mixture by adding the ferroelectric material to the titanic acid compound; and sintering the mixture at a temperature equal to or more than a melting point of the ferroelectric material.

A sputtering target includes an indium cerium zinc oxide represented by In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10.sup.2 cm to about 10 cm. A weight percentage of crystalline In.sub.2Ce.sub.xZnO.sub.4+2x in the sputtering target is larger than 80%.

A method is provided for producing an article which is transparent to IR wavelength in the region of 4 m to 9 m. The method includes the steps of (a) Producing ultra-fine powders of ZnS, (b) followed by pretreatment of the ultra-fine powders under reduced gas conditions including H2, H2S, N2, Ar and mixtures there of (c) followed by vacuum (310.sup.6 torr) treatment to remove oxygen and sulfates adsorbed to the surface disposing a plurality of nano-particles on a substrate, wherein said nanoparticles comprise ZnS with ultra-high purity of cubic phase; (b) subjecting the nano-particles to spark plasma sintering thereby producing a sintered ZnS product with IR transmission reaching 75% in the wavelength range of 4 m to 9 m.

The present disclosure relates to coated particles. The teachings thereof may be embodied in coated particles, a method for their production, and the use of the coated particles in X-ray detectors, gamma detectors, UV detectors, or solar cells. For example, some embodiments include particles comprising: perovskite crystals of the type ABX.sub.3 or AB.sub.2X.sub.4; wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof; B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation; and X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.

The present disclosure relates to coated particles. The teachings thereof may be embodied in coated particles, a method for their production, and the use of the coated particles in X-ray detectors, gamma detectors, UV detectors, or solar cells. For example, some embodiments include particles comprising: perovskite crystals of the type ABX.sub.3 or AB.sub.2X.sub.4; wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof; B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation; and X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.

A plant for the production of slabs from a mixture of agglomerate comprises a station (50) with a mixture distribution unit (52) which pours the mixture onto the inner surface of a slab forming mould (11) present in the station. The mould (11) is provided with a sheet (15) of plastic protective material arranged above the inner surface of the mould and which forms the surface for contact with the mixture which is introduced into the mould by the distribution unit (52). The station comprises air suction means which are coupled/connected to suction ducts (54) which are present in the mould and which emerge with their front end inside the mould in a zone of the mould situated between the inner surface of the mould and the sheet (15), so as to allow the suction of air between the sheet and this inner surface and bring the sheet (15) against this surface by means of a vacuum. A method for the production of slabs is also described.

A sputtering target includes an indium cerium zinc oxide represented by In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52. A method for making a sputtering target includes steps of: mixing indium oxide (In.sub.2O.sub.3) powder, cerium oxide (CeO.sub.2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250 C. to about 1650 C.