An inspection substrate for use in inspecting whether or not a constituent element of a cutting apparatus forms a scratch on a top surface of a workpiece when a cutting blade cuts the workpiece, the inspection substrate includes a top surface side of the inspection substrate having a groove portion for simulated cutting, the groove portion having a width that the cutting blade can pass through, and a paint layer disposed on the top surface side of the inspection substrate to improve visibility of a scratch formed on the top surface side.

A technology for processing (and/or working) a gemstone is provided, and specifically, a method for, and an apparatus for manufacturing a high-hardness diamond simulant by cutting a gemstone into a 100-sided body are provided.

Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.

A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

A wafer production method includes a separation layer forming step of positioning, from an end surface, the focal point of a laser beam with a wavelength having transmissibility with respect to a semiconductor ingot, at a depth corresponding to the thickness of a wafer to be produced, and irradiating the ingot with the laser beam to form a separation layer, a manufacturing history forming step of positioning the focal point of a laser beam with such a characteristic as not giving damage to a wafer to be produced next, to the upper surface of a region in which a device is not formed in the wafer to be produced, and irradiating the ingot with the laser beam to form a manufacturing history by ablation processing, and separating the wafer to be produced from the ingot using the separation layer as the point of origin, to produce the wafer.

A chuck table holding a frame unit including a workpiece is securely placed in an opening of an annular frame by a tape. A transparent holder having a holding surface holds the workpiece with the tape interposed therebetween. A frame body is erected around and surrounding the holder, the frame body having a plurality of suction holes that are open in an inner circumferential surface of the frame body. The frame body has an inside diameter equal to or smaller than an inside diameter of the annular frame. While an opening of the frame body is being covered by the tape, a suction force is transmitted through the suction holes into the frame body, discharging air from between the tape and the holding surface to bring the tape into intimate contact with the holding surface thereby securing the workpiece of the frame unit to the holding surface.

A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer.

A manufacturing method for sapphire crystal material is disclosed, including a laser-etched bar code formed into the interior of the sapphire crystal material. The laser-etched bar code may be associated with one or more manufacturing parameters or other manufacturing data. The sapphire crystal may be used to create a cover sheet for use with a display screen of a portable electronic device.

A manufacturing method for sapphire crystal material is disclosed, including a laser-etched bar code formed into the interior of the sapphire crystal material. The laser-etched bar code may be associated with one or more manufacturing parameters or other manufacturing data. The sapphire crystal may be used to create a cover sheet for use with a display screen of a portable electronic device.

A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.