Presented is a diamond comprising a table, a crown, a girdle, a pavilion, and a culet. The table is rectangular, having a length and a width. The table comprises a first side, adjacent to a second side, adjacent to a third side, and adjacent to a fourth side. The first side of the table is directly connected with a first facet of the girdle. The second side of the table is directly connected with a second facet of the girdle. The crown comprises a plurality of facets connecting the third side and the fourth side of the table to the girdle. The pavilion is connected to the girdle. The culet is positioned directly below a point having a 1% deviation from the center of the girdle.

Presented is a diamond comprising a table, a crown, a girdle, a pavilion, and a culet. The table is rectangular, having a length and a width. The table comprises a first side, adjacent to a second side, adjacent to a third side, and adjacent to a fourth side. The first side of the table is directly connected with a first facet of the girdle. The second side of the table is directly connected with a second facet of the girdle. The crown comprises a plurality of facets connecting the third side and the fourth side of the table to the girdle. The pavilion is connected to the girdle. The culet is positioned directly below a point having a 1% deviation from the center of the girdle.

Systems and method for aligning components of photonic systems are provided. An optical component for integration into and optical coupling within a photonic system is created by separating the component from a substrate to form a precisely defined surface on the optical component, the surface being precisely spaced from an optical feature of the component to be optically coupled within the photonic system. The precisely defined surface of the optical component is then pressed against a reference surface to position the optical feature in a predefined position and/or orientation for optical coupling of the optical feature within the photonic system. Passive precise alignment and optical coupling is thus provided without the need for iterative readjustment, multi-axis feedback, or active feedback.

A substrate manufacturing method of manufacturing a substrate from a workpiece is disclosed. A laser beam is first split and condensed to form a plurality of focal points aligned side by side along a first direction, and with the focal points positioned inside the workpiece, the focal points and the workpiece are moved relative to each other along a second direction orthogonal to the first direction such that a separation layer is formed. A region of the focal points and the workpiece are then moved relative to each other along the first direction. These relative movements are alternately and repeatedly performed. The splitting and condensation of the laser beam are performed such that a volume expansion of the workpiece associated with the formation of the modified regions is relatively small in the vicinity of at least one focal point formed on a center side.

A method is disclosed for dividing a composite material in which a brittle material layer and a resin layer are laminated, including: a resin removing step of irradiating the resin layer with a laser beam oscillated from a first laser source along a scheduled dividing line of the composite material to form a processing groove along the scheduled dividing line; a brittle material removing step of irradiating the brittle material layer with a laser beam oscillated from an ultrashort pulsed laser source along the scheduled dividing line to form a processing mark along the scheduled dividing line; and a brittle material layer dividing step of generating thermal stress in the brittle material layer by irradiating the brittle material layer with a laser beam oscillated from a second laser source from the opposite side to the resin layer to thereby divide the brittle material layer.

The present invention provides an ASC process automation device including: a loading part into which an ingot having been subjected to a wire sawing is input; a kerosene cleaning part for cleaning the ingot with kerosene; a precleaning part for precleaning the ingot; a main cleaning part for cleaning the ingot multiple times; a wafer peeling part for peeling the ingot to produce multiple wafers; and a transport unit for moving the ingot linearly and upward/downward while proceeding to the kerosene cleaning part, the precleaning part, the main cleaning part, and the wafer peeling part.

A method includes applying laser pulses along a direction to a side of a wafer to create first and second stealth damage regions at respective first and second depths in the wafer and to create cracks that extend in the wafer from the respective stealth damage regions and that are spaced apart from one another along the direction, applying a compressive and retractive cyclical force to the wafer along the third direction to propagate and join the cracks from the respective stealth damage regions together, and expanding the wafer to separate individual dies from the wafer.

The invention provides a method for laser modification of a sample to form a modified region at a target location within the sample. The method comprises positioning a sample in a laser system for modification by a laser; measuring tilt of a surface of the sample through which the laser focusses; using at least the measured tilt to determine a correction to be applied to an active optical element of the laser system; applying the correction to the active optical element to modify wavefront properties of the laser to counteract an effect of coma on laser focus; and laser modifying the sample at the target location using the laser with the corrected wavefront properties to produce the modified region.

A wire sawing apparatus of one embodiment comprises: a wire for cutting an ingot; an ingot conveyor unit for conveying the ingot to the wire; a nozzle for supplying slurry to the wire; and a dispersed slurry blocking unit disposed above the ingot sawed by the wire, so as to absorb at least a part of the slurry dispersed from the lateral sides of the ingot cut by the wire.

A wafer has a device area on one side with a plurality of devices partitioned by a plurality of division lines. Either side of the wafer is attached to an adhesive tape supported by a first annular frame. A modified region is formed in the wafer along the division lines by a laser. The wafer is placed on a support member whose outer diameter is smaller than an inner diameter of the first annular frame. After applying the laser beam, the adhesive tape is expanded thereby dividing the wafer along the division lines. A second annular frame is attached to a portion of the expanded adhesive tape. An inner diameter of the second annular frame is smaller than the outer diameter of the support member and smaller than the inner diameter of the first annular frame.