Patent classifications
B32B2313/00
Quantum dot films, lighting devices, and lighting methods
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Quantum dot films, lighting devices, and lighting methods
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Method for producing composite wafer having oxide single-crystal film
A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.
INTERLAYERS COMPRISING POLYESTERAMIDE COMPOSITIONS
The present application discloses interlayers comprising novel polyesteramides comprising diols with tunable properties based on the monomers and monomer ratios used to prepare the polyesteramides and varying the reaction conditions. The interlayers have improved properties and can be used in many different applications.
METHOD FOR PRODUCING BONDED BODY
A bonding step in a method of producing a bonded body includes a first bonding step of forming a sealing layer (4) by irradiating a sealing material (6) belonging to an inner group (IG) with a laser beam (L), and a second bonding step of forming a sealing layer (4) by irradiating a sealing material (6) belonging to an outer group (OG) with the laser beam (L) after the first bonding step.
Polyesteramides, processes for the preparation thereof, and polyesteramide compositions
The present application discloses novel polyesteramides comprising cycloalkyl diols and/or cycloalkyl dialkanols with tunable properties based on the monomers and monomerratios used to prepare the polyesteramides and varying the reaction conditions. The present application also discloses compositions and articles.
ANTIMICROBIAL TAPE
The present disclosure discloses an antimicrobial tape comprising a tape layer, a connection layer, and an antimicrobial layer. The connection layer is disposed on the tape layer, and the connection layer consists of angstrom-level silicon dioxide. The antimicrobial layer is disposed on the connection layer. The tape layer and the antimicrobial layer are connected by the connection layer consisting of angstrom-level silicon dioxide to increase the connection strength between the tape layer and the antimicrobial layer. The tape layer may be used to cover a surface of an object, and the antimicrobial layer is located on an outer surface. Therefore, after a user touching and using the object, the object has been sterilized through the antimicrobial layer of the antimicrobial tape.
Quantum Dot Films, Lighting Devices, and Lighting Methods
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
OPTICAL FILM, DISPLAY DEVICE INCLUDING OPTICAL FILM AND MANUFACTURING METHOD OF OPTICAL FILM
A display device includes a display panel which contains an LED which emits light, a first layer containing a porous polymer and disposed on the display panel, a second layer containing a metal halide and disposed on the first layer, and a lenticular lens disposed on the display panel, where the first layer has a first refractive index and the second layer has a second refractive index less than the first refractive index.
Method for forming hermetic seals in MEMS devices
A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.