The antifouling structure of the present invention includes a porous structural layer and a non-volatile liquid in pores and/or on a surface of the porous structural layer. The porous structural layer includes a modified portion at least at a surface part of the porous structural layer, and the elemental ratio of fluorine to silicon (F/Si) in the surface part is within the range of 3 to 50.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

The present invention provides a cover glass and a glass laminate which are reduced in warpage, and have excellent scratch resistance, low reflecting properties and excellent optical properties. According to the present invention, a cover glass and a glass laminate which are reduced in glass warpage, retain the effect of scratch resistance, and have low reflecting properties and excellent optical properties can be provided by alternately superposing a film including a high-refractive-index material and a film including a low-refractive-index material, in given amounts.

Provided are a manufacturing method for a composite wafer and a composite wafer obtained by using the manufacturing method, the manufacturing method including: preparing a first substrate in which a first layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; preparing a second substrate in which a second layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; forming a silicon layer on a surface of one of the first layer or the second layer; activating, with plasma, a surface of at least one of the silicon layer or another of the first layer or the second layer; and bonding the first substrate and the second substrate.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

The present application discloses interlayers comprising novel polyesteramides comprising diols with tunable properties based on the monomers and monomer ratios used to prepare the polyesteramides and varying the reaction conditions. The interlayers have improved properties and can be used in many different applications.

The present application discloses interlayers comprising novel polyesteramides comprising diols with tunable properties based on the monomers and monomer ratios used to prepare the polyesteramides and varying the reaction conditions. The interlayers have improved properties and can be used in many different applications.

The present application discloses interlayers comprising novel polyesteramides comprising diols with tunable properties based on the monomers and monomer ratios used to prepare the polyesteramides and varying the reaction conditions. The interlayers have improved properties and can be used in many different applications.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.