The present application discloses novel polyesteramides comprising cycloalkyl diols and/or cycloalkyl dialkanols with tunable properties based on the monomers and monomerratios used to prepare the polyesteramides and varying the reaction conditions. The present application also discloses compositions and articles.

The present application discloses novel polyesteramides comprising cycloalkyl diols and/or cycloalkyl dialkanols with tunable properties based on the monomers and monomerratios used to prepare the polyesteramides and varying the reaction conditions. The present application also discloses compositions and articles.

A wavelength conversion device comprises: a substrate; a reflective resin layer on the substrate; and a wavelength conversion layer on the reflective resin layer, configured to receive incident light and to provide output light by wavelength conversion of the incident light, such that the output light is reflected by the reflective resin layer. A method for manufacturing a wavelength conversion device by applying a reflective resin layer to a substrate and providing a wavelength conversion layer on the reflective resin layer is further provided.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

In a method of printing a transferable component, a stamp including an elastomeric post having three-dimensional relief features protruding from a surface thereof is pressed against a component on a donor substrate with a first pressure that is sufficient to mechanically deform the relief features and a region of the post between the relief features to contact the component over a first contact area. The stamp is retracted from the donor substrate such that the component is adhered to the stamp. The stamp including the component adhered thereto is pressed against a receiving substrate with a second pressure that is less than the first pressure to contact the component over a second contact area that is smaller than the first contact area. The stamp is then retracted from the receiving substrate to delaminate the component from the stamp and print the component onto the receiving substrate. Related apparatus and stamps are also discussed.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

The present invention is related to a flexible multilayer packaging film with high gas barrier properties comprising: one or more support layer(s) (1,10); one or more barrier layer(s) (6,60), each of the one or more barrier layer(s) (6,60) comprising an organic layer (2,20) and an inorganic layer(3,30); wherein said multilayer film has an oxygen transmission rate of less than 0.1 cm.sup.3/m.sup.2/24 h/atm, preferably less than 0.05 cm.sup.3/m.sup.2/24 h/atm, most preferably less than 0.03 cm.sup.3/m.sup.2/24 h/atm measured at 23 C. and 50% relative humidity.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.