An integrated circuit device includes: an integrated circuit module; a first field-effect transistor coupled between the integrated circuit module and a first reference voltage, and controlled by a first control signal; and a second field-effect transistor coupled between the integrated circuit module and the first reference voltage; wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor are configured to generate a second reference voltage for the integrated circuit module according to the first control signal.

Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

A substrate processing system comprises a processing chamber comprising a pedestal configured to support a substrate. The processing chamber comprises a showerhead configured to supply precursors during dose steps and a purge gas during purge steps of an atomic layer deposition (ALD) process to process the substrate. The dose steps and the purge steps comprise a sequence of a dose step followed by a subsequent purge step. The substrate processing system comprises a throttle valve connected to the processing chamber and a vacuum pump connected to the throttle valve. The substrate processing system comprises a controller configured to control the vacuum pump, open the throttle valve during the purge steps, and close the throttle valve during at least a portion of the dose steps to increase pressure in the processing chamber during at least the portion of the dose steps of the ALD process.