Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die in a first layer; an interposer in a second layer not coplanar with the first layer, the first layer coupled to the second layer by interconnects having a pitch of less than 10 micrometers between adjacent interconnects; and a first conductive pathway and a second conductive pathway in the interposer coupling the first IC die and a second IC die. The first IC die is configured to transmit at a first supply voltage through the first conductive pathway to a second IC die, the second IC die is configured to transmit to the first IC die through the second conductive pathway at a second supply voltage simultaneously with the first die transmitting at the first supply voltage, and the first supply voltage is different from the second supply voltage.

For example, a sensor die may include a plurality of pixel sensors configured to sense ionizing radiation. The plurality of pixel sensors may include a plurality of detection diodes. For example, the plurality of detection diodes may be in a surface region of a silicon substrate of the sensor die. The plurality of detection diodes may be formed of a diode material. For example, the sensor die may include a plurality of dummy-diode diffusions in the surface region of the silicon substrate. The plurality of dummy-diode diffusions may be in a plurality of gettering regions between the plurality of detection diodes. The plurality of dummy-diode diffusions may include the diode material. For example, a width of the dummy-diode diffusion may be no more than 5 percent of a width of a detection diode of the two adjacent detection diodes.

The invention provides an integrated circuit device and an adaptive power scaling method thereof to reduce and optimize power consumption. The integrated circuit device includes a first die and a second die, wherein the first die and the second die are stacked into a three-dimensional structure. A power circuit provides a power voltage to a first interface circuit of the first die and a second interface circuit of the second die. The first interface circuit transmits data to the second interface circuit via a die-to-die transfer circuit. The control logic controls the power circuit to adjust the power voltage provided to the first interface circuit and the second interface circuit based on the signal quality of the data received by the second interface circuit.

A power electronics assembly includes a printed circuit board including a plurality of substrate layers. The plurality of substrate layers include a first core layer and a second core layer stacked vertically below the first core layer, wherein the first core layer comprises a first electrical component embedded therein and the second core layer comprises a second electrical component embedded therein. The first electrical component and the second electrical component are arranged in a vertical column.

The disclosure describes a double-sided display pixel package structure and a method for fabricating the same. The double-sided display pixel package structure includes a transparent substrate, conduction bumps, a dummy diode structure, light-emitting diode (LED) structures, a first protection layer, a conduction layer, a second protection layer, and a half mirror film. The transparent substrate is penetrated with conduction vias. The conduction bumps are respectively formed on the conduction vias. The dummy diode structure and the LED structures are respectively formed on the conduction bumps. The first protection layer, formed on the transparent substrate, surrounds the conduction bumps, the dummy diode structure, and the LED structures. The conduction layer and the second protection layer are sequentially formed on the first protection layer, the dummy diode structure, and the LED structures. The half mirror film is formed on the substrate, the protection layers, and the conduction layer.

A semiconductor device may include a source structure; a gate structure including conductive layers and insulating layers that are alternately stacked; a first channel layer including a first penetration portion extending through the gate structure and a first tip having a smaller width than the first penetration portion and protruding into the source structure; a second channel layer including a second penetration portion extending through the gate structure and a second tip having a smaller width than the second penetration portion and protruding into the source structure; and a slit structure extending through the gate structure, wherein the first tip and the second tip may have different heights.

An electronic structure, an electronic package and a manufacturing method thereof are provided, in which a carrier and an adhesive layer are used to support or fix the electronic structure and the electronic package, and double carriers are used to support or fix the electronic structure and the electronic package, thereby avoiding the warpage problem of the electronic structure and the electronic package.

A memory includes a stacked body including electrode layers and first insulating layers stacked in a first direction. Each of a plurality of first columnar bodies includes a semiconductor layer located to penetrate through the stacked body in the first direction. A source is connected to an end part of the semiconductor layer on a side of one end of the semiconductor layer. A pillar portion is located to extend in the first direction in the stacked body, or in a structure located alongside the stacked body in a second direction, and includes a carbon material. A cap portion is located at an end part of the pillar portion on a side of another end out of one end and another end of the pillar portion respectively corresponding to the one end and another end of the semiconductor layer, and includes a first material having an etching-selectivity to the carbon material and the first insulating films.

A semiconductor package including a package substrate; an intermediate substrate on the package substrate; an optical engine unit on the intermediate substrate; a logic device adjacent to the optical engine unit and on the intermediate substrate; and a memory device adjacent to the logic device and on the intermediate substrate, wherein the optical engine unit includes a first redistribution substrate, a photonic integrated circuit (PIC) chip on the first redistribution substrate, an electronic integrated circuit (EIC) chip on the PIC chip, a multi-insulating layer surrounding the PIC chip and the EIC chip, and a transparent support layer on the EIC chip and the multi-insulating layer.

A package comprising a metallization portion; an integrated device comprising a plurality of pillar interconnects, wherein the integrated device is coupled to the metallization portion through the plurality of pillar interconnects; and an encapsulation layer at least partially encapsulating the integrated device, wherein the encapsulation layer is coupled to the metallization portion.