A display device is disclosed. The display device may include a substrate including a display area in which a plurality of pixels are provided and a pad area at one side of the display area, a circuit board electrically connected to each of the plurality of pixels, spaced and/or apart (e.g., spaced apart or separated) from the substrate in a first direction, and including a first ground portion and a second ground portion each in both sides (e.g., two opposing sides), and a cover member extending from an upper portion of the circuit board to a lower portion of the circuit board, and including a first contact portion which is bent toward the first ground portion and connected to the first ground portion and a second contact portion which is bent toward the second ground portion and connected to the second ground portion.

A display apparatus in some examples can include a substrate having an active area and a non-active area, a first non-active area enclosing the active area, a bending area extending from the first non-active area, a second non-active area extending from the bending area and having a plurality of pad electrodes disposed therein, a pixel driving circuit disposed on the substrate and electrically connected to the plurality of pad electrodes, a plurality of insulating layers disposed on the pixel driving circuit, and a plurality of micro LEDs disposed on the plurality of insulating layers. A pressure applied to the connection line when the flexible circuit board is bonded is minimized or reduced and a pressure margin for bonding the pad electrodes and the flexible circuit board can be ensured.

Provided is a display apparatus. The display apparatus comprises a substrate comprising a display area comprising a plurality of pixels, and a non-display area, one or more pixel drive circuits disposed on the substrate, a plurality of insulation layers disposed on the substrate, a plurality of banks on which the plurality of pixels is disposed on the plurality of insulation layers and a plurality of micro-LEDs disposed on the plurality of banks, wherein the plurality of pixels each comprise first subpixel and second subpixel sequentially disposed in a first direction in a first column and a third subpixel disposed in a second column.

Methods, systems, and devices for bypass interconnections for stacked semiconductor systems are described. An interface between a logic component and a system substrate of a semiconductor system may extend beyond an active area of a memory stack and couple between the logic component and the system substrate via one or more bypass regions. In some examples, through-silicon vias may be formed through portions of a memory stack, such as a semiconductor extension at edges of each memory die, which may be used for transfer of high-speed or high-energy signals. Additionally, or alternatively, a logic component may be placed on top of a stack of memory dies with separate bypass components along one or more sides adjacent to a memory stack, through which bypass interconnects may be formed, allowing for different configurations and avoiding the use of memory component silicon being allocated for such interconnections.

A structure includes a first core substrate; an adhesive layer on the first core substrate; a second core substrate on the adhesive layer, wherein the second core substrate includes a first cavity; a first semiconductor device within the first cavity; a first insulating film extending over the second core substrate, over a top surface of the first semiconductor device, and within the first cavity; a through via extending through the first insulating film, the first core substrate, and the second core substrate; a first routing structure on the first core substrate and electrically connected to the through via; and a second routing structure on the first insulating film and electrically connected to the through via and the first semiconductor device.

A method includes forming a package substrate comprising forming through-openings in a glass substrate, filling the through-openings to form through-vias in the glass substrate, forming a first interconnect structure underlying the glass substrate, and forming a second interconnect structure overlying the glass substrate. The method further includes forming an interposer over the package substrate, and bonding package components over and electrically connected to the package substrate through the interposer.

An interface device is adapted for a semiconductor device including a first die and a second die. The first die and the second die are electrically connected to each other to be stacked into a 3D structure. The interface device includes a controllable delay line, a clock generator, and a phase detector (PD) arranged on the second die. The controllable delay line receives a source clock signal of the first die. The controllable delay line delays the source clock signal to generate a first delayed clock signal. The clock generator generates a second delayed clock signal according to the first delayed clock signal. The PD detects a phase difference between a gained clock signal of the first die and the second delayed clock signal to generate phase relationship information. Based on the phase relationship information, the controllable delay line adjusts a delay amount to the source clock signal.

A display device includes: a display panel including a first area, a second area formed to be bendable from the first area, and a third area extending from the second area; a driving chip in the third area; a connection substrate including a first hole overlapping the driving chip and a second hole overlapping the third area, and overlapping at least a portion of the third area; and a first resin layer in the second hole.

A chip package assembly includes a first high-power chip, a second low-power chip, a thermal cooling device and a heterogeneous thermal interface material (HTIM). The thermal cooling device may overlie the first chip and the second chip. The HTIM includes a first thermal interface material (TIM) and a second TIM. The first TIM overlies the first chip, and the second TIM overlies the second chip. The first TIM includes a material that has a first thermal conductivity and a first modulus of elasticity. The first TIM can reflow when the first die reaches a first TIM reflow temperature. The second TIM comprises at least a polymer material. The second TIM has a second modulus of elasticity that is greater than the first modulus of elasticity and a second thermal conductivity that is less than the first thermal conductivity.

A semiconductor assembly, a packaging structure, and associated method for corner stress reduction in semiconductor devices. The assembly includes a plurality of semiconductor dies and a plurality of spacers. Each spacer in the plurality of spacers is disposed between and configured to separate two semiconductor dies in the plurality of semiconductor dies. At least one spacer in the plurality of spacers has at least one extended spacer corner feature configured to extend toward at least one corner of at least one semiconductor die in the plurality of semiconductor dies disposed adjacent to the at least one spacer. At least one extended spacer corner feature is configured to reduce stress on at least one semiconductor die.