The present application relates to the field of semiconductor technologies, and in particular, to a device integrated with a deep trench isolation structure and a manufacturing method therefor. The manufacturing method may include: providing a semiconductor structure, where the semiconductor structure includes a base, a gate material layer stacked on a surface of the base, and a mask layer stacked on the gate material layer, and a functional element of a semiconductor device is formed in the base; forming a deep trench in the semiconductor structure, where the deep trench extends through the mask layer and the gate material layer, and penetrates deep into the base; filling the deep trench to form a deep trench isolation structure, where the deep trench isolation structure includes a filling structure, the filling structure is not higher than the surface of the base, and a material of the filling structure is a conductive non-metallic material; patterning and etching the gate material layer to form a gate structure; and removing the mask layer. In the present application, a manufacturing process flow of the deep trench isolation structure can be integrated into a standard process of manufacturing a gate structure of a BCD device and another device, thereby simplifying an integration process of deep trench isolation and reducing manufacturing costs.