The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

A stealth dicing laser device including: a pulse laser generator configured to generate laser light; a condenser lens formed in an optical path of the laser light; a pupil filter configured to transform a phase of the laser light before the laser light passes through the condenser lens; and a controller configured to provide a phase control signal to the pupil filter, wherein the pupil filter transforms the phase of the laser light based on the phase control signal, wherein the phase control signal is a signal transforming a phase expression of the laser light based on a parameter.

A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substrate mounted on the substrate support unit through the gas distribution unit.

Embodiments relate to an electrode structure of a transfer roller part of a semiconductor light emitting device and an intelligent assembly-transfer integration device including the same. Electrode structure of transfer roller part of semiconductor light emitting device according to an embodiment can include a roller rotating part, an assembly substrate mounted on the roller rotating part, an adhesive film disposed between the roller rotating part and the assembly substrate, penetration electrodes penetrating the assembly substrate and roller pad electrodes disposed on the roller rotating part and electrically connected to the penetration electrodes.

Disclosed in the present invention is a short-range optical potentiometer module, comprising a potential base body provided with a key slot, and a potential key which is mounted inside the key slot and can be displaced up and down, wherein a reset member for resetting the potential key is also arranged inside the key slot, an optical pair transistor composed of a photosensitive element and a light-emitting element is arranged inside the potential key, the optical pair transistor can be displaced up and down along with the potential key, a key base is internally provided with a fixed grating corresponding to the optical pair transistor, the reset member is sleeved on the grating, and the grating is configured such that the flux of light received by the photosensitive element from the light-emitting element changes along with the up-and-down displacement of the potential key, thereby causing an electrical signal generated by the photosensitive element to change along with the displacement of the potential key. The module of the solution uses non-contact photoelectric elements, thereby greatly increasing the service life; when the change in flux of light at the same distance is adjusted, the overall height of the module is close to or the same as the height of a potential base body; and the module has a skillful overall structure layout, can be conveniently assembled and replaced, and has strong practicality.

A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

A semiconductor wafer mapping apparatus comprising a frame forming a wafer load opening communicating with a load station for a substrate carrier disposed to hold more than one wafers vertically distributed in the substrate carrier for loading through the wafer load opening, a movable arm movably mounted to the frame so as to move relative to the wafer load opening and having at least one end effector movably mounted to the movable arm to load wafers from the substrate carrier through the wafer load opening, an image acquisition system including an array of cameras arranged on a common support and each camera fixed with respect to the common support that is static with respect to each camera of the array of cameras, wherein each respective camera is positioned with a field of view disposed to view through the wafer load opening with the common support positioned by the movable arm.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

A substrate processing method includes providing a substrate formed with a stacked film including at least an etching target film, an underlying layer disposed below the etching target film, and a mask disposed above the etching target film; etching the etching target film through the mask using plasma; and performing heat treatment on the substrate at a predetermined temperature after the etching. At least one of the mask and the underlying layer contains a transition metal.