Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures and a second plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the first plurality of apertures. Each lid stack may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures. The choke plate may define protrusions extending from each of a top and bottom surface of the choke plate that are arranged substantially symmetrically about the first aperture.

The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first housing; a second housing combined with the first housing to define an internal space; a rotation coupling part for O fastening the first housing and the second housing to each other such that one of the first housing and the second housing is rotatable with respect to the other one of the first housing and the second housing; and a channel which supplies a fluid to the internal space or discharges the fluid from the internal space, and has at least a part thereof inserted into a pin hole formed in the rotation coupling part.

A holding device for a fracturable assembly, which is intended to separate along a fracture plane defined between an upper part and a lower part of the fracturable assembly, comprises at least two protrusions configured to keep the fracturable assembly suspended in a substantially horizontal holding position, the protrusions being intended to be located between the upper part and the lower part, against a peripheral chamfer of the upper part; a support located below and at a distance from the protrusions so as to gravitationally receive the lower part when the fracturable assembly is separated, and to keep it at a distance from the upper part held by the protrusions.

There is provided a technique that includes: forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a first supplier to the substrate and exhausting the precursor from an exhaust port installed opposite to the first supplier with the substrate interposed between the exhaust port and the first supplier; and (b) supplying a reactant from a second supplier to the substrate and exhausting the reactant from the exhaust port, wherein in (a), inert gas is supplied into the process chamber from a third supplier installed at a region, which is a region on a side of the exhaust port among a plurality of regions partitioned in the process chamber by a bisector perpendicular to straight line connecting the first supplier and the exhaust port in a plane view.

A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

A plasma processing method includes (a) forming a first protective film on a surface of an inner member of a chamber by a first processing gas including a precursor gas that does not contain halogen; and (b) performing plasma processing on a processing target that is carried in inside the chamber by a plasma of a second processing gas after the first protective film is formed on the surface of the member.

An edge ring used in a chamber comprises a cover with an internal space, a circuit board disposed in the internal space of the cover and at least one electrical element disposed on the circuit board. Here, the electrical element includes a temperature sensor, and temperature of the edge ring, heat distribution generated when ion bombardment occurs in plasma state or heat flux in the edge ring is measured by using the temperature sensor.

A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

A processing system includes: a chamber in which a consumable member is installed; a storage module configured to store the consumable member; a position detection sensor configured to detect a position of the consumable member; a vacuum transfer module connected to the chamber and the storage module, the vacuum transfer module having a transfer robot configured to transfer the consumable member between the chamber and the storage module; and a controller. The controller performs processes of: (a) controlling transfer robot to transfer consumable member installed in the chamber to the storage module; (b) detecting position of the consumable member transferred to the storage module by the position detection sensor; and (c) controlling transfer robot to transfer a new consumable member different from the consumable member from the storage module to the chamber at a position adjusted based on the position of the consumable member detected in the process (b).