A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.

An etching method according to the present invention includes after a step of creating a reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into a processing chamber and etching a coating film formed on a substrate, after the step of etching the coating film, a step of cleaning the substrate by supplying vapor into the processing chamber, and in the step of cleaning the substrate, a step of detecting SiF stretching vibration in the substrate by infrared spectroscopy, in which the step of cleaning the substrate ends when the SiF stretching vibration equal to or lower than a predetermined first threshold value is detected. Therefore, the time required for cleaning the substrate is prevented from being unnecessarily long.

A laser pressure head module including: a pressure member including: a first light-transmitting member; a second light-transmitting member; and a sealed space between the first light-transmitting member and the second light-transmitting member; and a gas supply unit to supply gas to the sealed space to generate a pressing force. The second light-transmitting member is to be expanded or moved in an external direction by the pressing force.

A chip peeling apparatus is provided that includes a housing having a seating surface for mounting a wafer, a recessed portion and a first vacuum suction hole in the seating surface, and a second vacuum suction hole, a blow hole and a protrusion in the recessed portion. The chip peeling apparatus further includes: a vacuum suction source that evacuates the first vacuum suction hole and the second vacuum suction hole; a pressure detector that detects a degree of vacuum of the second vacuum suction hole; a pressurization source that sends a fluid to the blow hole; a flow rate control valve; and a controller that determines a flow rate of the fluid to be sent to the blow hole, based on the degree of vacuum, and controls, via the flow rate control valve, the fluid sent from the pressurization source to flow at the determined flow rate.

Provided is a wafer treatment apparatus capable of measuring warpage of a wafer, the wafer treatment apparatus including a support plate providing a surface on which the wafer is supported, a temperature control channel mounted in the support plate to provide a path through which a fluid flows, and a plurality of warpage measurers disposed on the support plate and having lower ends mounted to be vertically spaced apart from an upper portion of the temperature control channel.

The present invention includes a liquid film formation step of supplying a processing liquid in which a sublimation drying processing agent obtained by mixing a first sublimable substance and a second sublimable substance which are different from each other in a eutectic composition or a near-eutectic composition is liquefied, onto a front surface of a substrate on which a pattern is formed, to thereby form a liquid film of the processing liquid on the front surface of the substrate, a solidified film formation step of solidifying the liquid film of the processing liquid, to thereby form a solidified film of the sublimation drying processing agent, and a sublimation step of sublimating the solidified film, to thereby remove the solidified film from the front surface of the substrate.

An apparatus monitoring semiconductor manufacturing equipment includes an optical detector, a light generator generating light along an optical path towards a semiconductor substrate, a first grating reticle between the light generator and the semiconductor substrate and including first slits having a first pitch and second slits having a second pitch different from the first pitch, a second grating reticle between the semiconductor substrate and the optical detector and including third slits having a third pitch different from the first pitch and the second pitch, in which the optical detector determines a positional attribute of the semiconductor substrate in relation to a first pattern and a second pattern, the first pattern corresponds to a first portion of light sequentially passing through the first slits and the third slits, and the second pattern corresponds to a second portion of light sequentially passing through the second slits and the third slits.

A method for supplying processing liquid is configured to adjust the supply amount of silica by a processing liquid supply unit in order to improve a selectivity ratio in a substrate treatment process through the processing liquid, to mix processing liquid substances, to adjust the concentration and temperature of the processing liquid on the basis of a substrate processing condition to supply the processing liquid to a substrate processing apparatus, to recover the processing liquid through a processing liquid recycling unit spatially separated from a processing liquid supply unit and to adjust the concentration of moisture and temperature of the processing liquid, and to supply the recycled processing liquid.

A solder reflow system that includes a vacuum chamber and a sample chuck in the vacuum chamber to support a semiconductor wafer to be processed. The solder reflow system further include a heating element coupled to the vacuum chamber and configured to heat the semiconductor wafer, a thermocouple connected to the sample chuck to measure a temperature of the semiconductor wafer, a pyrometer positioned to detect an optical signal from the semiconductor wafer to estimate the temperature of the semiconductor wafer. The control system is configured to control the heating element to heat the semiconductor wafer, obtain one or more measurements of the temperature of the semiconductor wafer from the thermocouple and one or more estimates of the temperature of the semiconductor wafer from the pyrometer during the heating of the semiconductor wafer, and determine a modification of the heating of the semiconductor wafer based on the obtained measurements.

An EFEM includes a housing including a transfer chamber in which a processing target object is transferred, and a connection module provided between the transfer chamber and a front chamber, wherein the housing includes a rear member having a housing-side opening through which the processing target object is capable of passing, the connection module includes a first frame part arranged around the housing-side opening and pressed by a transfer chamber-side surface of the rear member, a second frame part provided in the front chamber and arranged around a front chamber-side opening, and connected to the first frame part, and a sealing part configured to seal the second frame part and the front chamber, and the sealing part includes a flexible portion capable of expanding and contracting at least in a predetermined direction, and an enclosure portion connected to the flexible portion and configured to enclose the front chamber-side opening.