The present inventive concept relates to a substrate transfer device that detects an abnormality of a plurality of end-effectors and a method for determining an abnormality of the substrate transfer device. The substrate transfer device includes: a plurality of end-effectors extending in a first direction and disposed in multi-stages in a second direction crossing the first direction to support substrates, respectively; an interval adjustment unit configured to adjust an interval between the plurality of end-effectors; and an abnormality detection unit configured to detect an abnormality of each of the plurality of end-effectors, wherein the plurality of end-effectors may include: a reference end-effector that is fixed in position; and a variable end-effector that is adjusted in distance from the reference end-effector with respect to the reference end-effector.

A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below 20 C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Method for inspection of an inner pod EIP and/or an outer pod EOP of an EUV pod, respectively including a base member and a cover member. The method includes acquiring inspection data sets using a line scan camera and an area scan camera, inspecting the cover member in a first inspection unit using the line scan camera, inspecting the base member in a second inspection unit using the area scan camera, inspecting the cover member in the second inspection unit using the area scan camera, and inspecting the base member in the first inspection unit using the line scan camera.

A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.

The present disclosure relates to a tool and method for correcting a position of a wafer in a semiconductor manufacturing machine, including: a cover plate, disposed on one side that is of the chamber away from the wafer bearing apparatus, the cover plate is provided with a mounting hole; a transparent plate, installed in the mounting hole, a projection of the wafer bearing apparatus on the transparent plate is located in the transparent plate; and a first scale and a second scale, disposed on the transparent plate, the first scale extends to edges of the transparent plate along a first direction and a direction away from the first direction, the second scale extends to edges of the transparent plate along a second direction and a direction away from the second direction, and the first scale and the second scale are provided with a plurality of uniformly distributed scale lines.

A wafer cleaning apparatus provided by the present invention comprises a rotary shaft, a chuck arranged on the top of the rotary shaft for retaining the wafer, a fixed shaft coaxially passed through the rotary shaft, and an upper end cover and a lower end cover that block the top and bottom of the fixed shaft respectively. Wherein, the fixed shaft is a hollow shaft with at least one circle of exhaust holes provided on the wall of the fixed shaft. The lower end cover is arranged with a gas inlet port, through which a protective gas is provided to the interior of the fixed shaft. The protective gas forms a positive pressure in the annular space between the fixed shaft and the rotary shaft through the at least one circle of exhaust holes. The present invention provides positive pressure protective gas to the spacing between the fixed shaft and the rotary shaft by opening exhaust holes on the wall of the fixed shaft. A gas seal is formed to prevent contaminants, such as particles and metals, generated in the bottom area of the rotary shaft from diffusing to the back side of the wafer through the annular space between the fixed shaft and the rotary shaft, thereby improving the cleanliness of the back side of the wafer after cleaning.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

Provided is an apparatus for processing a substrate, the apparatus including: a liquid treatment chamber; a drying chamber; and a light treatment chamber, in which the light treatment chamber includes: a treatment housing having a treatment space in which the substrate is processed; a support member for supporting the substrate in the treatment space; a light source for irradiating the substrate supported on the support member with light in the form of pulses; and a light filter for selecting a set range of wavelengths of the light generated by the light source and allowing the selected wavelengths to pass through.