A substrate processing apparatus configured to dry a substrate with a processing fluid in a supercritical state includes: a processing vessel; a substrate holder configured to hold the substrate horizontally within the processing vessel; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line and connected to the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; and a bypass opening/closing valve configured to open or close the bypass line.

A fluid control device that controls a fluid supplied into a process container includes: a flow path block; and a fluid controller installed to the flow path block. The flow path block includes: a gas supply flow path including an inlet, through which the fluid is introduced, and an outlet through which the fluid flows into the process container; and a storage chamber that stores the fluid in the gas supply flow path between the inlet and the outlet. The fluid controller includes: a first valve that opens and closes the gas supply flow path between the inlet and the storage chamber; and a second valve that opens and closes the gas supply flow path between the storage chamber and the outlet.

A method and equipment for manufacturing a package structure are disclosed. The equipment includes a first space, a de-bonding apparatus, a second space and a fluid supply device. The de-bonding apparatus is disposed in the first space, and configured to perform a de-bonding process. The second space is disposed around the first space. The fluid supply device is configured to make a first humidity of an atmosphere in the first space greater than a second humidity of an atmosphere in the second space.

Substrate processing systems and methods have expanded substrate processing capabilities. For such systems, substrate handling chamber bodies of different styles and for different areas of the substrate processing system may be formed using a standard substrate handling chamber precursor. Such substrate handling chamber precursors may include an exterior shape most of which can be used for two (or more) different styles of substrate handling chamber bodies. During milling, the standard precursors can be milled in different ways and by removing different amounts of material to form substrate handling chamber bodies having different numbers of facets, with different shapes, and for different locations in a substrate processing system.

An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

A positioning device for positioning a stage relative to a tool mounted on a carrier device includes two intersecting linear axes disposed one above the other for pre-positioning the stage. A first magnetic levitation unit is configured to support the stage on one of the linear axes, the stage being actively movable for fine positioning in six degrees of freedom. A measuring head and first and second 6-DOF encoders are configured to determine a position of the stage relative to the carrier device. The measuring head is mounted on the other linear axis. The first 6-DOF encoder is disposed between the carrier device and the measuring head and the second 6-DOF encoder is disposed between the measuring head and the stage. A second magnetic levitation unit disposed on the other linear axis is configured to actively move the measuring head in the six degrees of freedom.

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

There is provided a technique that includes: a first connector including a first opening including two longitudinally extending parallel sides and configured to provide a detachable connection to an opening of a first counterpart; and a second connector including a substantially circular second opening and configured to be connectable to an opening of a second counterpart; and a pipe including an internal space formed in a shape of a polyhedron and configured to allow fluid communication between the first opening and the second opening.

A substrate transfer method performed in a substrate processing apparatus including a transfer mechanism group configured to transfer a substrate into a carrier via a module group and an exposure apparatus is provided. The transfer mechanism group includes a first transfer mechanism configured to transfer the substrate in an order of the pre-stage module, the exposure apparatus, and a first post-stage module, and a second transfer mechanism configured to transfer the substrate in an order of the first post-stage module, a heating module, a developing module, and a second post-stage module, a post-stage transfer mechanism. The substrate transfer method includes comparing an exposure apparatus cycle time with a section transfer time required to transfer the substrate from a transfer section by the second transfer mechanism to a transfer section by the post-stage transfer mechanism; and setting the section transfer time based on a result of the comparing.