A system includes an integrated circuit device configured to implement a circuit design. The integrated circuit device includes a communication interface configured to receive the circuit design in a configuration bitstream and instrumentation logic in the configuration bitstream and signal collector block configured to collect signal data based on the instrumentation logic during implementation of the circuit design.

A stacked semiconductor device is disclosed that includes a plurality of semiconductor dies. Each die has oppositely disposed first and second surfaces, with pads formed on each of the surfaces. A plurality of through-vias connect respective pads on the first surface to respective pads on the second surface. The through-vias include a first group of through-vias coupled to respective I/O circuitry on the semiconductor die and a second group of through-vias not coupled to I/O circuitry on the semiconductor die. The plurality of semiconductor dies are stacked such that the first group of through-vias in a first one of the plurality of semiconductor dies are aligned with respective ones of at least a portion of the second group of through-vias in a second one of the plurality of semiconductor dies.

Stacked semiconductor packages with features to mitigate trace exposer and associated systems and methods are disclosed herein. In some embodiments, the stacked semiconductor package includes a base substrate, a stack of dies carried by the base substrate, and a mold material deposited at least partially encapsulating the stack of dies. The base substrate can include an active surface and a back surface opposite the active surface. Further, the active surface can include one or more cuts into a peripheral portion of the active surface (e.g., stepped structures at the peripheral edges of the base substrate). The base substrate can also include a plurality of bond pads carried by the active surface over the peripheral portion. Still further, the mold material can fill each of the one or more cuts in the active surface, thereby insulating the bond pads from exposure at a sidewall of the stacked semiconductor package.

The invention relates to a metal-ceramic substrate, to an electronic component comprising a metal-ceramic substrate, and to a method for producing a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body in a planar manner, the metal layer having a structuring region which comprises (i) partially solid material and (ii) partially non-solid material, and c) a contact area which is arranged on the metal layer and comprises silver, the structuring region having a geometry in a cross-section through the metal-ceramic substrate perpendicular to the main extension plane, the following requirement being met: S(BC.sub.solid)/S(BC.sub.total)>60%, wherein: S(BC.sub.total) represents the total length of the line between points B and C, and S(BC.sub.solid) represents the length of the line between points B and C that intersects the solid material.

A semiconductor device includes: a first chip including a plurality of first device features and a plurality of first interconnect structures disposed above the first device features; a second chip including a plurality of second device features and a plurality of second interconnect structures disposed above the second device features; and an interposer bonded to the first chip and the second chip, and disposed opposite the first and second device features from the first and second interconnect structures; wherein the interposer includes a plurality of power rails configured to deliver power to the first and second chips.

The present invention relates to a ceramic substrate and a method for manufacturing the same, the ceramic substrate comprising: a ceramic base material; a first electrode pattern and a second electrode pattern formed on the upper and lower surfaces of the ceramic base material; and a third electrode pattern which is formed on the upper surface of the ceramic base material and is spaced apart from the first electrode pattern, wherein a volume ratio obtained by dividing the total volume of the first electrode pattern by the total volume of the second electrode pattern may be 0.9 to 1.1.

A method includes bonding an integrated circuit die to a carrier substrate, forming a gap-filling dielectric around the integrated circuit die and along the edge of the carrier substrate, performing a bevel clean process to remove portions of the gap-filling dielectric from the edge of the carrier substrate, after performing the bevel clean process, depositing a first bonding layer on the gap-filling dielectric and the integrated circuit die, forming a first dielectric layer on an outer sidewall of the first bonding layer, an outer sidewall of the gap-filling dielectric, and the first outer sidewall of the carrier substrate; and bonding a wafer to the first dielectric layer and the first bonding layer, wherein the wafer comprises a semiconductor substrate and a second dielectric layer on an outer sidewall of the semiconductor substrate.

A method for manufacturing a semiconductor bonding structure is provided. The method includes forming a first semiconductor structure, forming a second semiconductor structure and hybrid bonding the first semiconductor structure and the second semiconductor structure. The step of forming the first semiconductor structure includes introducing boron into a first substrate to form an doped region in the first substrate, forming a first dielectric layer above the first substrate, and forming a first conductive pad in the first dielectric layer. The step of forming a second semiconductor structure includes forming a second dielectric layer above a second substrate, and forming a second conductive pad in the second dielectric layer. The first conductive pad is attached to the second conductive pad. The first dielectric layer is attached to the second dielectric layer.

An electronic device includes a substrate, a through hole, a first electronic unit, a second electronic unit, a circuit structure, and a third electronic unit. The substrate has a first surface, a second surface opposite the first surface, a first cavity, and a second cavity. A sidewall of the first cavity is connected to the first surface, and a sidewall of the second cavity is connected to the first surface. The through hole extends through the substrate, and a sidewall of the through hole is connected to the first surface and the second surface. The first electronic unit is disposed in the first cavity. The second electronic unit is disposed in the second cavity. The circuit structure is disposed on the first electronic unit and the second electronic unit. The bottom surfaces of the first and second cavities have a roughness ranging from 0 to 2 micrometers.

A semiconductor package may include a first semiconductor chip, second semiconductor chips stacked on the first semiconductor chip in a vertical direction, adhesive layers interposed between the first semiconductor chip and one of the second semiconductor chips and between the second semiconductor chips, and a molding member on the first semiconductor chip. Edges of the adhesive layers may be positioned inward from sidewalls of the second semiconductor chips. The molding member may cover at least sidewalls of the second semiconductor chips and sidewalls of the adhesive layers. The molding member may fill edge gaps defined by the sidewalls of the adhesive layers and edges of upper surfaces and lower surfaces of the second semiconductor chips.