A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors, the second level overlaying the first level; and at least four electronic circuit units (ECUs), where each of the ECUs include a first circuit, the first circuit including a portion of the first transistors, where each of the ECUs includes a second circuit, the second circuit including a portion of the second transistors, where each of the ECUs includes a first vertical bus, where the first vertical bus provides electrical connections between the first circuit and the second circuit, where each of the ECUs includes at least one processor and at least one memory array, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonding regions and metal to metal bonding regions.

A printed wiring board assembly is disclosed that includes a printed wiring board with a first side and a second side opposite first side. Magnet structures are in physical contact with the printed wiring board and a microelectronic device component is coupled to the first side of the printed wiring board. A heat spreader overlies and is in thermal communication with the microelectronic device component, and posts are coupled to the heat spreader and horizontally neighbor the microelectronic device component, where the posts are in magnetic communication with the magnet structures. Related methods and electronic systems are also disclosed.

A semiconductor device may include a peripheral circuit portion, a memory cell array disposed over the peripheral circuit portion and including a vertical conductive line, a bonding pad structure between the peripheral circuit portion and the memory cell array, a dielectric pad layer configured to cover the top of the vertical conductive line of the memory cell array, and a higher-level pad that is coupled to the vertical conductive line through the dielectric pad layer.

A wafer stacking method includes the following steps. A first wafer is provided. A second wafer is bonded to the first wafer to form a first wafer stack structure. A first edge defect inspection is performed on the first wafer stack structure to find a first edge defect and measure a first distance in a radial direction between an edge of the first wafer stack structure and an end of the first edge defect away from the edge of the first wafer stack structure. A first trimming process with a range of a first width is performed from the edge of the first wafer stack structure to remove the first edge defect. Herein, the first width is greater than or equal to the first distance.

A microelectronic assembly comprises a first microelectronic component; a second microelectronic component under an area of the first microelectronic component and coupled to the first component through first interconnect structures within a central region of the area, and second interconnect structures within a peripheral region of the area, adjacent to the central region. A heterogenous dielectric surface on the first or second component or both and within a gap between the first and second components has a first surface composition within the central region and at least a second surface composition within the peripheral region.

Methods of fabricating a semiconductor device include securing a first die to a second die. The first die includes a first clock signal path from a clock source to a first load and passing through a tap point electrically connected to a clock output. The second die includes a second clock signal path from a clock input to a second load. The methods also include connecting the clock input of the second die to the clock output of the first die. A first divergence between the tap point and the first load is substantially the same as a second divergence from the tap point through the clock input and the clock output to the second load. Various other methods, devices, and systems are also disclosed.

Disclosed is a stacked electronic device including a first and second bonded structure. The first bonded structure includes a first and second semiconductor element, each having a semiconductor region, a front side on one side of the semiconductor region including active circuitry, and a back side opposite the front side. The front side of the first semiconductor element is bonded and electrically connected to the front side of the second semiconductor element. The second bonded structure includes a third and fourth semiconductor element, which can include similar components to the first and second semiconductor elements. The front side of the third semiconductor element is bonded and electrically connected to the front side of the fourth semiconductor element. The back side of the second semiconductor element is bonded and electrically connected to the back side of the third semiconductor element.

Methods and apparatus of hybrid bonding with inspection are provided herein. In some embodiments, a method of hybrid bonding with inspection includes: cleaning a substrate via a first cleaning chamber and a tape frame having a plurality of chiplets via a second cleaning chamber; inspecting, via a first metrology system, the substrate for pre-bond defects in a first metrology chamber and the tape frame for pre-bond defects in a second metrology chamber; bonding one or more of the plurality of chiplets to the substrate via a hybrid bonding process in a bonder chamber to form a bonded substrate; and performing, via a second metrology system different than the first metrology system, a post-bond inspection of the bonded substrate via a third metrology chamber for post-bond defects.

A bonded structure is disclosed. The bonded structure can include an interconnect structure. The bonded structure can also include a first die directly bonded to the interconnect structure. The bonded structure can also include a second die mounted to the interconnect structure. The second die is spaced apart from the first die laterally along an upper surface of the interconnect structure. The second die is electrically connected with the first die at least partially through the interconnect structure. The bonded structure can further include a dielectric layer that is disposed over the upper surface of the interconnect structure between the first die and the second die.

As an example of a semiconductor device is disclosed. The semiconductor device 1 includes a semiconductor die 3 and a wiring layer 5a to which the semiconductor die 3 is attached. The semiconductor die 3 includes a semiconductor substrate 3a having a first surface and a second surface opposite thereto, a plurality of terminal electrodes 3b provided on the first surface of the semiconductor substrate 3a, and a cured resin layer 3c. The cured resin layer 3c is provided on the first surface of the semiconductor substrate 3a so as to cover the plurality of terminal electrodes 3c. The semiconductor die 3 can be, for example, a bride die that connects a semiconductor die 2a and a semiconductor die 2b to each other.