The present disclosure is directed to a semiconductor carrier platform having a support panel with a top surface and a bottom surface, with the top surface providing a working surface for assembling IC packages using panel-level packaging technology. In an aspect, a backside molding layer may be positioned on the bottom surface of the support panel to prevent or correct any panel warpage. In another aspect, a removable film may be positioned between the bottom surface of the support panel and the backside molding layer to allow the support panel to be readily cleaned and reused.

An electronic device includes a substrate, a first metal layer embedded in a first surface of the substrate and a second metal layer embedded in a second surface of the substrate opposite that of the first surface. A via layer is disposed between the first metal layer and the second metal layer and electrically connects the first metal layer and the second metal layer. The via layer includes a moisture dissipation feature. A die is attached to the first metal layer and a mold compound is formed over the die.

A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes first and second sublayers of first and second oxide materials, respectively, where the first oxide material is different than the second oxide material. Related devices and fabrication methods are also discussed.

A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes first and second sublayers of first and second oxide materials, respectively, where the first oxide material is different than the second oxide material. Related devices and fabrication methods are also discussed.

A semiconductor device may include a first substrate including device and edge regions, a first insulating structure on the first substrate, first metal pads and first dummy pads at the uppermost end of the first insulating structure, a second insulating structure on the first insulating structure, second metal pads and second dummy pads at the lowermost end of the second insulating structure, a first interconnection structure in the first insulating structure, electrically connected to the first metal pads and electrically isolated from the first dummy pads, and a second interconnection structure in the second insulating structure, electrically connected to the second metal pads, and electrically isolated from the second dummy pads. Ones of the first metal pads may be in contact with respective ones of the second metal pads on the device region, and ones of the first dummy pads may be in contact with respective ones of the second dummy pads on the edge region.

Embodiments herein relate to systems, apparatuses, or processes directed to fabricating passive circuits on a surface of a BEOL of a package, for example on a C4 connection layer of the BEOL. In embodiments, the passive circuits may be fabricated using a standard bump process. Other embodiments may be described and/or claimed.

Embodiments herein relate to systems, apparatuses, or processes directed to fabricating passive circuits on a surface of a BEOL of a package, for example on a C4 connection layer of the BEOL. In embodiments, the passive circuits may be fabricated using a standard bump process. Other embodiments may be described and/or claimed.

A semiconductor package includes a first die having a first substrate, an interconnect structure overlying the first substrate and having multiple metal layers with vias connecting the multiple metal layers, a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure having multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, and a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over and aligned with a top surface of the outer metal structure of the seal ring structure.

A semiconductor package includes a first die having a first substrate, an interconnect structure overlying the first substrate and having multiple metal layers with vias connecting the multiple metal layers, a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure having multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, and a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over and aligned with a top surface of the outer metal structure of the seal ring structure.

An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include an integrated circuit die and a dielectric material on sidewalls of the integrated circuit die. The integrated circuit die may include a substrate, a protective structure in the substrate, an interconnect structure on the substrate, and a seal ring structure in the interconnect structure and in contact with the protective structure. The protective structure and the substrate may include a same semiconductor material, and the protective structure may include a first dopant and a second dopant different from the first dopant. The interconnect structure may include dielectric layers and conductive features in the dielectric layers. The seal ring structure may encircle the conductive features of the interconnect structure in a top-down view.