An electronic package is provided, including a package substrate in which a circuit layer and a surface treatment layer are embedded in an insulating portion, and the surface treatment layer is coupled to a top surface of the circuit layer, but is not formed on a side surface of the circuit layer. Therefore, the circuit layer can maintain the original predetermined line spacing so that it is beneficial to be designed with fine line spacing/line width.

A device includes a redistribution structure, including conductive features; dielectric layers; and an internal support within a first dielectric layer of the dielectric layers, wherein the internal support is free of passive and active devices; a first interconnect structure attached to a first side of the redistribution structure; a second interconnect structure attached to the first side of the redistribution structure, wherein the second interconnect structure is laterally adjacent the first interconnect structure, wherein the internal support laterally overlaps both the first interconnect structure and the second interconnect structure.

Provided are a semiconductor package substrate, a method of manufacturing the semiconductor package substrate, and a semiconductor package. According to one embodiment of the present disclosure, a semiconductor package substrate includes a base substrate having a lower surface in which a first trench is provided and an upper surface in which a second trench and a third trench are provided, including a circuit pattern and a conductive material; a first resin arranged in the first trench; and a second resin arranged in the second trench and the third trench, wherein the second trench exposes at least a part of the first resin.

A semiconductor chip includes a substrate, a device interlayer insulating layer, a wiring layer on the device interlayer insulating layer and including an inner lower insulating stack and an outer lower insulating stack, an upper insulating stack on the wiring layer and including upper insulating layers, a first crack propagation prevention structure on the device interlayer insulating layer between a first insulating layer side surface and a second insulating layer side surface, the first and second insulating layer side surfaces being partially included in the upper insulating stack, and a first blocking trench between the first crack propagation prevention structure and the first insulating layer side surface, the first blocking trench being recessed from an upper surface of the upper insulating stack in a direction toward the substrate.

A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Systems, methods, and apparatuses are provided for a bonding scheme for reduced crosstalk-induced jitter in a memory device and enabling high speed data transfers to and from the memory device with high storage capacity. An apparatus can include an I/O interface and a first number of memory dies, wherein each memory die of the first number of memory dies is coupled to a different memory die of the first number of memory dies in a cascading pattern via one or more conductive lines forming a first portion of a ground path to the I/O interface. Further, the apparatus includes a second number of memory dies coupled to the I/O interface via one or more second conductive lines forming a second portion of the ground path to the I/O interface, wherein the second number of memory dies is stacked on the first number of memory dies in the cascading pattern.

A semiconductor structure includes a functional die, a dummy die, a conductive feature and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The alignment mark is electrically isolated from the dummy die and the conductive feature

A semiconductor structure includes a functional die, a dummy die, a conductive feature and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The alignment mark is electrically isolated from the dummy die and the conductive feature

An antenna module includes a first substrate, a second substrate, the second substrate including at least one cavity at one of the first main surface. The first substrate includes at least an RF antenna element and/or an RF chip and/or an RF conductive trace, which are arranged on the first main surface of the substrate. The first substrate is connected, with its first main surface, to the first main surface of the second substrate so that the RF elements project into the at least one cavity.

An antenna module includes a first substrate, a second substrate, the second substrate including at least one cavity at one of the first main surface. The first substrate includes at least an RF antenna element and/or an RF chip and/or an RF conductive trace, which are arranged on the first main surface of the substrate. The first substrate is connected, with its first main surface, to the first main surface of the second substrate so that the RF elements project into the at least one cavity.