A semiconductor device has a first substrate and a first electrical component disposed over a first surface of the first substrate. A second electrical component is disposed over a second surface of the first substrate opposite the first surface of the first substrate. The second electrical component exhibits magnetic attraction from magnetic material or a magnetic coil. The first substrate has an opening and the second electrical component has one or more feet extending through the opening in the first substrate. A third electrical component is disposed over a second substrate and the second substrate is disposed over the first substrate. A conductive post connects the first substrate and second substrate. An encapsulant can be deposited around the first electrical component and a shielding layer is disposed over the second electrical component. The second electrical component can provide a power management function.

A semiconductor device includes a semiconductor substrate, an interlayer insulating film and an element region formed on the semiconductor substrate, and first and second seal rings surrounding the element region. Each of the first and second seal rings is formed of a layered conductive film including at least one linear interconnect layer and at least one linear via layer, and are insulated from each other or electrically connected only in an uppermost one of layers forming the conductive film. The first seal ring is electrically insulated from the semiconductor substrate. The second seal ring is electrically connected to the semiconductor substrate.

Embodiments of the present disclosure provide a semiconductor structure including Through Silicon Vias (TSVs) for delivering power from a backside power rail to a front side device layer and Feed Through Vias (FTVs) for delivering signals between a backside interconnect structures and a front side interconnect structure. The TSV provides reduces RC delays in the semiconductor structure.

Embodiments herein describe an integrated circuit (IC) including an integrated circuit including a first die and a second die including an inductor and disposed over the first die, where the second die is electrically coupled to the first die via hybrid bonds (HBs). The IC may include a metal layer disposed under a portion of the inductor. The IC may further include a shielding layer disposed within the first die. The IC may also include first metal strips disposed adjacent a head section of the inductor and second metal strips disposed over a leg section of the inductor. The inductor may include a head section constructed as a dual loop and a leg section constructed as a pair of legs, where the inductor is enclosed within isolation walls.

A semiconductor structure may include: an operation structure including a first multi-face structure and operation chips, wherein the first multi-face structure include a first signal path, and the operation chips are on faces of the first multi-face structure and are connected to the first signal path; an interface structure including a second multi-face structure and interface chips, wherein the second multi-face structure includes a second signal path, and the interface chips are on faces of the second multi-face structure and are connected to the second signal path; and a multi-face connection structure that contacts a first connection face from among the faces of the first multi-face structure and a second connection face from among the faces of the second multi-face structure, wherein the multi-face connection structure includes a third signal path that is connected to the first signal path and the second signal path.

A package includes a substrate, and a first die, a second die, a first structural member, and a second structural member that are disposed on the substrate. A first dielectric material is disposed between the first die and the second die. The first structural member is disposed on a side that is of the first die and that is away from the substrate, and the first die is located in a region of orthographic projection of the first structural member on a surface of the substrate. The second structural member is disposed on a side that is of the second die and that is away from the substrate, the second die is located in a region of orthographic projection of the second structural member on the surface of the substrate, and there is a gap between the first structural member and the second structural member.

Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a substrate and a first interconnect layer over the substrate. The first interconnect layer includes a first device region and a first ring region surrounding the first device region. The first ring region includes a first wall fully surrounding the first device region and a second wall fully surrounding the first device region and the first wall. The first wall is spaced apart from the second wall by a first intermetal dielectric layer and at least one first dummy metal line along an edge of the first device region. The first wall is spaced apart from the second wall only by the first intermetal dielectric layer around a corner of the first device region.

Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a substrate and a first interconnect layer over the substrate. The first interconnect layer includes a first device region and a first ring region surrounding the first device region. The first ring region includes a first wall fully surrounding the first device region and a second wall fully surrounding the first device region and the first wall. The first wall is spaced apart from the second wall by a first intermetal dielectric layer and at least one first dummy metal line along an edge of the first device region. The first wall is spaced apart from the second wall only by the first intermetal dielectric layer around a corner of the first device region.

An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the interconnect-level dielectric material layers, at least one dielectric capping layer located on a second side of the interconnect-level dielectric material layers, a bonding-level dielectric layer located on the at least one dielectric capping layer, metallic pad structures including pad via portions embedded in the at least one dielectric capping layer and pad plate portions embedded in the bonding-level dielectric layer, and an edge seal ring structure vertically extending from a first horizontal plane including bonding surfaces of the package-side bump structures to a second horizontal plane including distal planar surfaces of the metallic pad structures. The edge seal ring structure may include a vertical stack of metallic ring structures that are free of aluminum and laterally surround the package-side bump structures and the redistribution interconnect structures.

An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the interconnect-level dielectric material layers, at least one dielectric capping layer located on a second side of the interconnect-level dielectric material layers, a bonding-level dielectric layer located on the at least one dielectric capping layer, metallic pad structures including pad via portions embedded in the at least one dielectric capping layer and pad plate portions embedded in the bonding-level dielectric layer, and an edge seal ring structure vertically extending from a first horizontal plane including bonding surfaces of the package-side bump structures to a second horizontal plane including distal planar surfaces of the metallic pad structures. The edge seal ring structure may include a vertical stack of metallic ring structures that are free of aluminum and laterally surround the package-side bump structures and the redistribution interconnect structures.