A method includes forming an interconnect structure and an interposer. The interconnect structure comprises a first plurality of redistribution lines, and a wafer seal ring encircling the first plurality of redistribution lines. The interposer comprises a second plurality of redistribution lines, and a plurality of die seal rings encircling the second plurality of redistribution lines. The method includes bonding a first plurality of package components to the interposer, and bonding a second plurality of package components to the interconnect structure. The first plurality of package components are electrically connected to the second plurality of package components through the interposer and the interconnect structure.

A semiconductor device includes a semiconductor substrate, a sealing ring, and at least one routing wiring. The semiconductor substrate has a peripheral region in plan view. The sealing ring is formed on the peripheral region. The sealing ring includes a plurality of conductors and a plurality of first plugs. Each of the plurality of conductors is laminated along a thickness direction of the semiconductor substrate and extends along the peripheral region in plan view. Each of the plurality of conductors has an outer edge and an inner edge in plan view. The plurality of conductors includes a first conductor located at the uppermost layer and a plurality of second conductors located below the first conductor. The outer edge of the first conductor is positioned outside any of outer edges of each of the plurality of second conductors.

A method for forming a semiconductor package structure includes following operations. A first semiconductor wafer is received. The first semiconductor wafer includes a first front side and a first backside. The first semiconductor wafer has a first central region and a first peripheral region. The first semiconductor wafer includes a first interconnect structure in the first central region on the first front side, a first ring structure in the first peripheral region on the first front side, and a first bonding layer over the first ring structure and the first interconnect structure on the first front side. A second semiconductor wafer is received. The second semiconductor wafer has a second front side and a second backside. The second semiconductor wafer includes a second bonding layer disposed on the second front side. The first bonding layer is bonded to the second bonding layer.

An embodiment semiconductor device may include a semiconductor die; one or more redistribution layers formed on a surface of the semiconductor die and electrically coupled to the semiconductor die; and an active or passive electrical device electrically coupled to the one or more redistribution layers. The active or passive electrical device may include a silicon substrate and a through-silicon-via formed in the silicon substrate. The active or passive electrical device may be configured as an integrated passive device including a deep trench capacitor or as a local silicon interconnect. The semiconductor device may further include a molding material matrix formed on a surface of the one or more redistribution layers such that the molding material matrix partially or completely surrounds the active or passive electrical device.

Bonded die structures and methods of fabricating bonded die structures with improved stress distribution. A bonded die structure may include a second die bonded to a first die. The sizes, shapes and/or relative position of the first die with respect to the second die may be configured to minimize stress concentrations in the bonded die structure. In some embodiments, a length dimension of a corner region of the second die may be less than a length dimension of the adjacent corner region of the first die, which may aid in redistributing stress away from the corner of the first die. An offset distance between the corner of the second die and the corner of the first die may also be controlled to minimize stress applied to the corner of the first die along a vertical direction. Accordingly, crack formation may be reduced, and device performance and yields may be improved.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.

The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers that are alternately stacked, a channel plug at least partially passing through the stack structure on a cell region, and a plurality of support structures at least partially passing through the stack structure on a contact region.