A light-emitting device includes a mounting member, first to third light-emitting elements mounted on a mounting surface, and first to third protective elements mounted on the mounting surface and respectively electrically connected to the first to third light-emitting elements. In a plan view viewed along a normal direction of the mounting surface, at least a part of the first protective element is disposed between the first light-emitting element and the second light-emitting element, at least a part of the second protective element and at least a part of the third protective element are disposed between the second light-emitting element and the third light-emitting element, and the second light-emitting element is disposed between the first light-emitting element and the third light-emitting element.

A junction field-effect transistor device includes an integrated temperature sensor, and a method of making the same is disclosed. A temperature sensor material having a first charge carrier polarity is implanted into an area of semiconductor material having a second charge carrier polarity, with the area being located adjacent to the junction field-effect transistor. The sensor material contains dopants and exhibits an electrical resistance that increases with a number of ionized ones of the dopants. The number of ionized dopants increases with the temperature of the material. First and second electrical terminals are provided spaced-apart on the sensor material for measuring the electrical resistance of the material. The measured electrical resistance may be translated into a temperature value for the junction field-effect transistor.

An electric apparatus includes: a first stacked body in which a first semiconductor chip having a first switch is stacked on a first mounting portion; a second stacked body in which a second semiconductor chip having a second switch is stacked on a second mounting portion; a temperature sensor provided in the first stacked body to detect a temperature of the first switch; and a current sensor provided in the second stacked body to detect a current flowing through the second switch. The second stacked body has a heat dissipation property higher than that of the first stacked body.

There is provided a semiconductor device including: a semiconductor substrate which has an upper surface; a temperature sense diode which is arranged above the upper surface of the semiconductor substrate; an anode pad which is arranged above the upper surface of the semiconductor substrate, and which is connected to an anode of the temperature sense diode; a cathode pad which is arranged above the upper surface of the semiconductor substrate, and which is connected to a cathode of the temperature sense diode; a gate pad which is arranged above the upper surface of the semiconductor substrate; and a gate runner which is arranged above the upper surface of the semiconductor substrate, and which is connected to the gate pad, in which an entire region between the anode pad and the cathode pad does not overlap with the gate runner.

A semiconductor device includes a semiconductor element having a surface on which a first electrode and a second electrode are disposed, a conductor plate having a surface facing the surface of the semiconductor element and electrically connected to the first electrode, an insulating layer disposed on the surface of the conductor plate and covers a part of the surface of the conductor plate, and a conductor circuit pattern disposed on the insulating layer. The conductor circuit pattern has at least one conductor line electrically connected to the semiconductor element. The at least one conductor line includes a conductor line electrically connected to the second electrode.

A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement terminal and a second measurement point electrically connected to the emitter electrode, so that a voltage which drops over the temperature sensor is measurable between the measurement terminal and the first emitter terminal for the temperature measurement. Corresponding methods for determining a temperature of a power semiconductor element and for determining a sign of a load current in a bridge circuit are also described.

A system comprises an integrated circuit die substrate; volatile memory electrically coupled to the integrated circuit die substrate; a first integrated circuit die element electrically coupled to the integrated circuit die substrate, the first integrated circuit die element comprising a first field programmable gate array (FPGA), and the first integrated circuit die element disposed adjacent to the volatile memory; a battery charger operable to receive power from a main power supply, the main power supply having an on state and an off state, wherein the main power supply is supplying power in the on state and not supplying power in the off state; and a battery module disposed on a top portion of the first integrated circuit die element, the battery module operable to receive power from the battery charger, and the battery module operable to supply power to the volatile memory at least when the main power supply is in the off state.

A semiconductor device includes a first substrate and a first device layer. The first device layer is disposed on the first substrate and includes a first region and a second region of the first device layer. The first device layer includes at least one first device and a sensor aside the at least one first device. The sensor includes a first resistor with a first non-linear temperature resistance curve and a second resistor with a second non-linear temperature resistance curve. A temperature of the sensor is linearly related to a difference between a first resistance of the first resistor at the temperature and a second resistance of the second resistor at the temperature.

A semiconductor device includes a first substrate and a first device layer. The first device layer is disposed on the first substrate and includes a first region and a second region of the first device layer. The first device layer includes at least one first device and a sensor aside the at least one first device. The sensor includes a first resistor with a first non-linear temperature resistance curve and a second resistor with a second non-linear temperature resistance curve. A temperature of the sensor is linearly related to a difference between a first resistance of the first resistor at the temperature and a second resistance of the second resistor at the temperature.

A hybrid integrated heat spreader suitable for an integrated circuit (IC) die package. The hybrid integrated heat spreader includes a top sheet material and a sealant interface material located where the heat spreader is to contact an assembly substrate. The sealant interface material may offer greater adhesion to a sealant employed between the interface material and the package substrate. In some examples, the sealant interface material has a greater surface roughness and/or a different composition than a surface of the integrated heat spreader that is in close thermal contact with an IC die through a thermal interface material. With the sealant interface material improving adhesion, the sealant may have a higher bulk modulus, enabling the integrated heat spreader to impart greater stiffness to the IC die package assembly.