The present invention relates to a semiconductor device. The semiconductor device of the present invention includes a semiconductor substrate, a semiconductor layer disposed on the semiconductor substrate, a plurality of resistors disposed in the semiconductor layer, at least one electrode layer disposed on the semiconductor layer, and a first temperature measurement pad, a second temperature measurement pad, and a third temperature measurement pad that are disposed on the semiconductor layer, wherein the plurality of resistors are electrically connected to at least one of the first temperature measurement pad, the second temperature measurement pad, and the third temperature measurement pad, and heat is transferred to the plurality of resistors through the semiconductor layer, thereby allowing measurement of temperatures of the semiconductor layer and the highest-temperature heat source of the semiconductor device based on resistance values of the plurality of resistors.

Provided is a semiconductor package including an interposer, a first semiconductor chip stack arranged on the interposer and including a plurality of first semiconductor chips, a second semiconductor chip stack arranged on the interposer and including a plurality of second semiconductor chips, and spaced apart from the first semiconductor chip stack in a lateral direction, and a first bridge chip arranged on the interposer, wherein the interposer includes a second wiring structure, a first wiring structure spaced apart from the second wiring structure upwardly, a first embedded semiconductor chip and a second embedded semiconductor chip arranged between the first wiring structure and the second wiring structure, and a plurality of first conductive posts arranged between the first embedded semiconductor chip and the second embedded semiconductor chip.

A method comprises: covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material; and forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

Various examples relate to a diamond-based film for a die stack, to a method for forming a diamond-based film for a die stack, and to a die stack comprising at least one diamond-based film. The diamond-based film comprises a plurality of laser-induced graphitic structures configured to provide electrical connectivity between a first semiconductor die and a second semiconductor die arranged adjacent to the diamond-based film in the die stack.

A heat dissipating member includes: a sintered material portion containing copper and at least one of tungsten and molybdenum; and a plurality of silicon oxide particles dispersed in the sintered material portion. The heat dissipating member has a copper content of M.sub.Cu weight percent, a tungsten content of M.sub.W weight percent, a molybdenum content of M.sub.Mo weight percent, and a silicon oxide content of M.sub.SiO2 weight percent in terms of SiO.sub.2 equivalent, relative to a total weight of copper, tungsten, and molybdenum. The heat dissipating member satisfies: 0.9M.sub.Cu/(M.sub.Cu+M.sub.W+M.sub.Mo)0.045; and 0.01M.sub.SiO2/(M.sub.Cu+M.sub.W+M.sub.Mo)0.0003.

An apparatus, comprising an interposer; a memory module, comprising a plurality of memory chips, and mounted to the interposer; and a heatsink, fastened to the interposer and configured to compress the interposer against the memory module.

A component carrier includes i) a stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, ii) an electronic component embedded in the stack; and iii) a thermal structure, configured to dissipate thermal energy produced by the electronic component towards and beyond a main surface of the stack. The thermal structure includes iiia) a base structure mounted on and/or at least partially embedded in the stack, in particular flush with one of the layer structures of the stack, and iiib) a plurality of protrusions, protruding from the base structure, and extending beyond the main surface of the stack.

A system includes: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: an upper phase multi-chip module including: a low-voltage upper phase controller; a high-voltage upper phase A controller; an upper phase A galvanic isolator connecting the low-voltage upper phase controller to the high-voltage upper phase A controller; a high-voltage upper phase B controller; an upper phase B galvanic isolator connecting the low-voltage upper phase controller to the high-voltage upper phase B controller; a high-voltage upper phase C controller; and an upper phase C galvanic isolator connecting the low-voltage upper phase controller to the high-voltage upper phase C controller.

A two-sided interconnected embedded chip packaging structure includes a first insulating layer and a second insulating layer. The first insulating layer includes a first conductive copper column layer penetrating through the first insulating layer in a height direction and a first chip located between adjacent first conductive copper columns, and the first chip is attached to the inside of the lower surface of the first insulating layer. The second insulating layer includes a first conductive wire layer and a heat radiation copper surface which are located in the upper surface of the second insulating layer, the first conductive wire layer is provided with a second conductive copper column layer, the first conductive copper column layer is connected with the first conductive wire layer, and the heat radiation copper surface is connected with the reverse side of the first chip.