This disclosure relates to embodiments that include an apparatus that may comprise a first layer including a first plurality of active devices, a second layer including a second plurality of active devices, and/or a third layer including a plurality of passive devices and disposed between the first and the second layers. An active device of the first plurality of active devices and an active device of the second plurality of active devices may influence a state of charge of a passive device of the plurality of passive devices.

A semiconductor package is provided. The semiconductor package includes: a lower equipotential plate provided in a lower wiring layer; an upper equipotential plate provided in an upper wiring layer; a pair of differential signal wiring lines provided in a signal wiring layer that is between the lower equipotential plate and the upper equipotential plate, wherein the pair of differential signal wiring lines includes a first differential signal wiring line and a second differential signal wiring line which are spaced apart from each other and extend in parallel; and a wiring insulating layer surrounding the pair of differential signal wiring lines, and filling between the signal wiring layer, the lower wiring layer, and the upper wiring layer. The wiring insulating layer includes a first wiring insulating layer surrounding the pair of differential signal wiring lines, and a second wiring insulating layer, and the first wiring insulating layer and the second wiring insulating layer include different materials.

According to one embodiment, an isolator includes first and second electrodes, first and second insulating portions, and a first dielectric portion. The first insulating portion is provided on the first electrode. The second electrode is provided on the first insulating portion. The second insulating portion is provided around the second electrode along a first plane perpendicular to a first direction. The second insulating portion contacts the second electrode. The first dielectric portion is provided between the first and second insulating portions. At least a portion of the first dielectric portion contacts the second electrode and is positioned around the second electrode along the first plane. A distance between a lower end of the second electrode and a first interface between the first dielectric portion and the second insulating portion is less than a distance between the first interface and an upper end of the second electrode.

An embodiment semiconductor device may include a semiconductor die; one or more redistribution layers formed on a surface of the semiconductor die and electrically coupled to the semiconductor die; and an active or passive electrical device electrically coupled to the one or more redistribution layers. The active or passive electrical device may include a silicon substrate and a through-silicon-via formed in the silicon substrate. The active or passive electrical device may be configured as an integrated passive device including a deep trench capacitor or as a local silicon interconnect. The semiconductor device may further include a molding material matrix formed on a surface of the one or more redistribution layers such that the molding material matrix partially or completely surrounds the active or passive electrical device.

A semiconductor structure includes a core layer; a passive component disposed within the core layer; and a first redistribution layer disposed over the core layer, wherein the first redistribution layer includes a first interconnect, a second interconnect, and a third interconnect disposed between and electrically isolated from the first interconnect and the second interconnect. The third interconnect is electrically connected to the passive component, and at least one of the first interconnect and the second interconnect is electrically isolated from the passive component. A method of manufacturing the semiconductor structure includes providing a first bias between the first interconnect and the second interconnect, providing a second bias to the passive component through the third interconnect, wherein the first bias is greater than the second bias.

A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.

A semiconductor module includes: an insulator substrate; a first metallization layer arranged at the insulator substrate; and two or more controllable semiconductor elements arranged on a surface of the first metallization layer. Each controllable semiconductor element includes: a gate electrode; a first load electrode; a second load electrode; a control current path between the control electrode and the first load electrode; a controllable load current path between the first load electrode and the second load electrode; and a first circuit element arranged between the control current path and the load current path.

A controller applied to a power converter includes a startup and pulse control circuit, a power switch, a startup circuit, and a clamping circuit. The power switch is coupled to a primary side of the power converter and the startup and pulse control circuit, and turned on according to a gate control signal generated by the startup and pulse control circuit. The startup circuit is coupled to the primary side of the power converter, the startup and pulse control circuit and the power switch, and turned on according to a startup signal generated by the startup and pulse control circuit. The clamping circuit is coupled to the startup and pulse control circuit and the power switch, and clamps a current flowing through the startup circuit when the startup circuit is turned on.

The present invention provides a package structure with an inductor and a manufacturing method thereof, the inductor and the interconnection component are used as n second package module, and stacked with other components such as the first package module to form a stack-like package structure. The first package module is provided with other electronic elements. Then the first and second package modules can be synchronously subjected to package manufacturing, which improves the production efficiency. Additionally, the soldering balls with different heights are formed on the first faces of the interconnecting structural component and the inductive device by adjusting the consumption of soldering paste, which make the second faces of the inductor and the interconnection component are coplanar, then inductor with different heights can form a flat interconnecting plane, which makes the sequential process such as pasting and mounting can be conveniently performed. The process is simplified, and the reliability of the package structure is improved.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.