A wafer processing method for removing a chamfered portion of a first wafer that includes producing a provisionally bonded wafer in which first and second wafers are weakly bonded; forming a ring-shaped modified layer by applying a laser beam to an inner side adjacent to a chamfered portion formed at an outer periphery of the first wafer of the provisionally bonded wafer, and detaching the chamfered portion from the second wafer, with the modified layer serving as a starting point; and producing a completely strongly bonded wafer by annealing the provisionally bonded wafer. The wafer processing method further includes grinding and thinning the first wafer, with the second wafer being held on a chuck table constituting a grinding apparatus, and removing the chamfered portion of the first wafer that is detached from the second wafer, with the modified layer serving as a starting point.

Provided is a method for cleaning a wafer that enables sufficient removal of cutting chips from the wafer surface. The method for cleaning a wafer includes: mounting a wafer 56 on a spinner table 4 such that a rear surface of the wafer 56 faces the spinner table 4 and a front surface 56a of the wafer 56 is exposed, the spinner table 4 being rotatable while holding the wafer 56; subjecting the front surface 56a of the wafer 56 to first cleaning with cleaning water supplied to the front surface 56a of the wafer 56, while rotating the spinner table 4; and subjecting the front surface 56a of the wafer 56 to second cleaning with ammonia water supplied to the front surface 56a of the wafer 56 using a brush. [Elected View] FIG. 6

A lift-off method includes joining a transfer substrate to a face side of an optical device layer of an optical device wafer with a joining member interposed therebetween, thereby making up a composite substrate, applying a pulsed laser beam having a wavelength transmittable through the epitaxy substrate and absorbable by a buffer layer, from a reverse side of the epitaxy substrate of the optical device wafer, thereby breaking the buffer layer, and an optical device layer transferring step of peeling off the epitaxy substrate from the optical device layer and transferring the optical device layer to the transfer substrate. The optical device layer transferring step includes the step of applying a bending moment to an area of the composite substrate that includes an outer peripheral portion thereof while holding an area of the composite substrate that includes a central portion thereof.

A lift-off method includes joining a transfer substrate to a face side of an optical device layer of an optical device wafer with a joining member interposed therebetween, thereby making up a composite substrate, applying a pulsed laser beam having a wavelength transmittable through the epitaxy substrate and absorbable by a buffer layer, from a reverse side of the epitaxy substrate of the optical device wafer, thereby breaking the buffer layer, and an optical device layer transferring step of peeling off the epitaxy substrate from the optical device layer and transferring the optical device layer to the transfer substrate. The optical device layer transferring step includes the step of applying a bending moment to an area of the composite substrate that includes an outer peripheral portion thereof while holding an area of the composite substrate that includes a central portion thereof.

A method of manufacturing a semiconductor device includes: forming a silicon oxide film covering each of a first main surface and a second main surface of a semiconductor substrate; forming a redistribution wiring on the first main surface side of the semiconductor substrate; and grinding the second main surface of the semiconductor substrate. This grinding step is performed in a state in which a thickness of the silicon oxide film positioned on the second main surface is equal to or larger than 10 nm and equal to or smaller than 30 nm.

A semiconductor package includes a first wiring structure which includes a first insulating layer, and a first wiring pad inside the first insulating layer, a first semiconductor chip on the first wiring structure, a second wiring structure on the first semiconductor chip, and a connecting member between the first wiring structure and the second wiring structure. The second wiring structure includes a second insulating layer and a plurality of second wiring pads in the second insulating layer which each directly contact one surface of the first semiconductor chip.

A substrate trimming apparatus includes a support configured to support a bonding substrate including at least two substrates bonded to each other, a waterjet cutting unit arranged to face an upper surface of the support and configured to trim an edge area of the bonding substrate by discharging pressurized fluid, and a camera unit configured to sense the trimmed edge area of the bonding substrate, in which the waterjet cutting unit includes a water body through which ultrapure water passes, a mixing tube coupled to a lower portion of the water body, and an abrasive supplying unit configured to supply an abrasive, and the waterjet cutting unit is configured to discharge at least one of the ultrapure water or a mixture of the ultrapure water and the abrasive towards the edge area of the bonding substrate.

A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

In terms of composition containing a cellulose derivative, provided are a polishing composition, a substrate protective agent, and a method of producing the same that are effective for reducing post-polishing surface defects. Provided is a method of producing a polishing composition containing an abrasive, a basic compound, a cellulose derivative, and a surfactant. The method includes a step (A) of dissolving a material cellulose derivative in a solvent to prepare a material cellulose derivative solution; and the following steps: a step (B1) of heating the material cellulose derivative solution and a step (B2) of adding a material surfactant to the material cellulose derivative solution that underwent the step (B1); or a step (C1) of adding a material surfactant to the material cellulose derivative solution to prepare an additive mixture liquid and a step (C2) of heating the additive mixture liquid.