In terms of composition containing a cellulose derivative, provided are a polishing composition, a substrate protective agent, and a method of producing the same that are effective for reducing post-polishing surface defects. Provided is a method of producing a polishing composition containing an abrasive, a basic compound, a cellulose derivative, and a surfactant. The method includes a step (A) of dissolving a material cellulose derivative in a solvent to prepare a material cellulose derivative solution; and the following steps: a step (B1) of heating the material cellulose derivative solution and a step (B2) of adding a material surfactant to the material cellulose derivative solution that underwent the step (B1); or a step (C1) of adding a material surfactant to the material cellulose derivative solution to prepare an additive mixture liquid and a step (C2) of heating the additive mixture liquid.

A wafer processing method includes forming a ring-shaped modified layer by holding a second wafer of a bonded wafer on a holding table and applying a laser beam with a focal point of the laser beam positioned on an inner side adjacent to a chamfered portion formed at an outer periphery of a first wafer of the bonded wafer; loading the bonded wafer onto a grinding apparatus for grinding the first wafer of the bonded wafer; and grinding the first wafer to thin the first wafer and remove the chamfered portion formed at the outer periphery of the first wafer by a grinding force. The loading or the grinding includes supplying a fluid for weakening a bonding force to an interface of the chamfered portion at which the first wafer and the second wafer are bonded.

A laminate substrate is divided along a plurality of intersecting scheduled division lines. The laminate substrate has a first substrate and a second substrate formed of the same material, laminated through an intermediate layer containing metal. The laminate substrate is divided by cutting the laminate substrate along the scheduled division lines by use of a substrate cutting blade to form the first substrate with first cut grooves each having a width larger than a cutting edge thickness of a metal cutting blade which is larger in cutting edge thickness than the substrate cutting blade, and thereafter cutting the laminate substrate along the first cut grooves by use of the metal cutting blade to cut the intermediate layer and to form second cut grooves each having a width corresponding to the cutting edge thickness of the metal cutting blade.

A laminate substrate is divided along a plurality of intersecting scheduled division lines. The laminate substrate has a first substrate and a second substrate formed of the same material, laminated through an intermediate layer containing metal. The laminate substrate is divided by cutting the laminate substrate along the scheduled division lines by use of a substrate cutting blade to form the first substrate with first cut grooves each having a width larger than a cutting edge thickness of a metal cutting blade which is larger in cutting edge thickness than the substrate cutting blade, and thereafter cutting the laminate substrate along the first cut grooves by use of the metal cutting blade to cut the intermediate layer and to form second cut grooves each having a width corresponding to the cutting edge thickness of the metal cutting blade.

The present invention relates to processes of making components for electronic and optical devices using laser processing and devices comprising such components. Such process uses a laser to introduce chemical and/or structural changes in substrates and films that are the raw materials from which components for electronic and optical devices are made. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film. In addition, such process does not require large-scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized.

A method of manufacturing a semiconductor device is provided. The method includes: providing a two-dimensional material layer on a substrate; and supplying an etchant to the two-dimensional material layer to remove a residue from the two-dimensional material layer. The supplying the etchant to the two-dimensional material layer includes: supplying a first process gas to a chamber in which the substrate is provided; supplying microwaves to the chamber to form a first plasma in the chamber; and supplying a second process gas, including a different material from the first process gas, to the chamber to form a second plasma including the etchant.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate formed of silicon carbide. The semiconductor substrate has a first surface and a second surface opposite to each other in a first direction, and the semiconductor substrate has a ring-shaped edge region. The method further includes forming a die on the first surface, and performing a backside grinding process on the second surface to provide a backside surface at a virtual reference plane. The ring-shaped edge region includes a sidewall surface extending in the first direction and a first edge surface being between the first surface and the sidewall surface. A reference thickness between the first surface and the virtual reference plane in the first direction is 20 m to 200 m. A first edge height of the first edge surface in the first direction is smaller than the reference thickness.

The cutting method for a workpiece includes cutting an outer circumferential portion of one surface of the workpiece to form an annular step portion by causing a cutting blade to cut into a chamfered portion of the one surface of the workpiece held by a holding surface of a chuck table and rotating the chuck table. The cutting method also includes cutting a bottom portion of the annular step portion by relatively moving the chuck table and the cutting blade after the cutting the outer circumferential portion to form the annular step portion. The cutting the bottom portion of the annular step portion includes relatively moving the chuck table and the cutting blade along a longitudinal direction of a spindle on which the cutting blade is mounted in a state in which the height position of the spindle relative to the chuck table is kept.

A method for manufacturing a semiconductor device is provided. The method includes: forming a first conductivity type semiconductor layer on a first surface of a substrate containing SiC; forming a doping layer by implanting ions into the first conductivity type semiconductor layer; forming a gate insulation layer on the first conductivity type semiconductor layer; forming a gate electrode on the gate insulation layer; forming a source electrode connected to the doping layer; reducing a thickness of the substrate by performing a thinning process on a second surface opposite to the first surface of the substrate; and forming a groove in the substrate on the second surface.

A semiconductor member manufacturing method includes a laser processing step of forming a converging spot of laser light in an object including a semiconductor while relatively moving the converging spot with respect to the object along a line extended in a circular shape when viewed from a Z direction intersecting with an incident surface of the laser light in the object, thereby forming a modified region and a fracture extended from the modified region along the line in the object, and a separation step of, after the laser processing step, separating a part of the object using the modified region and the fracture as a boundary, thereby forming a semiconductor member from the object.