A semiconductor member manufacturing method includes a laser processing step of forming a converging spot of laser light in an object including a semiconductor while relatively moving the converging spot with respect to the object along a line extended in a circular shape when viewed from a Z direction intersecting with an incident surface of the laser light in the object, thereby forming a modified region and a fracture extended from the modified region along the line in the object, and a separation step of, after the laser processing step, separating a part of the object using the modified region and the fracture as a boundary, thereby forming a semiconductor member from the object.

A semiconductor wafer cleaning apparatus is provided. The semiconductor wafer cleaning apparatus includes a spin base, a spindle extending through the spin base, and a clamping member covering the spin base. The spindle includes a mounting part and a supporting part disposed on the mounting part. The mounting part includes an inner projection, the supporting part includes a conical projection, and the conical projection is surrounded by the inner projection. The semiconductor wafer cleaning apparatus further includes a first sealing ring disposed between the spin base and the mounting part.

Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.

The present disclosure provides a method for forming a semiconductor device. A first wafer including a first substrate and a first interconnection layer formed on the first substrate is provided. A second wafer including a second substrate and a second interconnection layer formed on the second substrate is provided. The second wafer is stacked on the first wafer. A thinning process is performed on the second substrate of the second wafer. An edge trimming process is performed to remove portions of the second interconnection layer and the second substrate along a perimeter of the second wafer, wherein the edge trimming process results in the first wafer having a recessed surface. A protective layer, surrounding a sidewall of the thinned and edge-trimmed second wafer, is formed on the recessed surface to form a wafer stack structure.

A method of processing a wafer by processing a first wafer having a beveled part on an outer circumferential edge thereof includes holding, on a first holding surface of a first chuck table, a second surface side of the first wafer that is opposite a first surface side thereof such that the first surface side of the first wafer is exposed and after the second surface side of the first wafer has been held, processing the outer circumferential edge of the first wafer to remove the beveled part on the outer circumferential edge of the first wafer in its entirety or a portion of the beveled part on the first surface side. The first wafer is progressively smaller in diameter from the first surface side toward the second surface side in a region of the outer circumferential edge of the first wafer that has been processed.

An apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a holding member configured to hold the combined substrate; a removing member configured to separate at least a peripheral portion of the first substrate from the second substrate by being inserted between the first substrate and the second substrate; an elevating mechanism configured to adjust a relative height position of the removing member with respect to the holding member; and a controller configured to control an operation of the elevating mechanism. The controller controls the operation of the elevating mechanism such that the relative height position of the removing member with respect to a target insertion position of the removing member is adjusted in an entire circumference of the combined substrate.

An apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a holding member configured to hold the combined substrate; a removing member configured to separate at least a peripheral portion of the first substrate from the second substrate by being inserted between the first substrate and the second substrate; an elevating mechanism configured to adjust a relative height position of the removing member with respect to the holding member; and a controller configured to control an operation of the elevating mechanism. The controller controls the operation of the elevating mechanism such that the relative height position of the removing member with respect to a target insertion position of the removing member is adjusted in an entire circumference of the combined substrate.

An adhesive member includes a base film having a first surface and a second surface opposite to the first surface, a carrier adhesive film disposed on the first surface of the base film and configured to contact a carrier substrate, and a device adhesive film disposed on the second surface of the base film and configured to contact a device wafer. The device adhesive film includes a gas blowing agent, and the carrier adhesive film does not include any gas blowing agent.

An adhesive member includes a base film having a first surface and a second surface opposite to the first surface, a carrier adhesive film disposed on the first surface of the base film and configured to contact a carrier substrate, and a device adhesive film disposed on the second surface of the base film and configured to contact a device wafer. The device adhesive film includes a gas blowing agent, and the carrier adhesive film does not include any gas blowing agent.

Provided are methods of manufacturing including preparing a first substrate including a first surface and a second surface opposite the first surface, wherein the first substrate includes a device region and an edge region surrounding the device region, forming a first insulating layer on the first surface of the first substrate, the first substrate and the first insulating layer forming a first wafer, forming a stepped portion in an upper surface of the first insulating layer so that a first vertical level of a first portion of the upper surface of the first insulating layer in the device region is different from a second vertical level of a second portion of the upper surface of the first insulating layer in the edge region, bonding the first wafer to a second wafer, and separating the edge region from the device region of the first substrate by emitting a laser beam onto the second surface of the first substrate.