A planarization system is provided. The planarization system includes a first substrate chuck which holds the substrate during a planarization step, and a second substrate chuck which holds the substrate with a non-flat configuration during a separation step.

A method for depositing protective layers on a surface of a substrate includes conducting a plurality of ALD cycles in a first reaction chamber to deposit a first protective layer on the substrate. Each ALD cycle of the plurality of ALD cycles is conducted at a deposition temperature below about 100 C. and includes delivering a first precursor gas into the first reaction chamber containing the substrate. A reacting portion of the first precursor gas is absorbed onto a surface of the substrate to form a first sub-layer of the protective layer. A second precursor gas is delivered into the first reaction chamber containing the substrate, a reacting portion of the second precursor gas being absorbed onto the surface of the substrate to form a second sub-layer of the protective layer. Metrology analysis is performed on the substrate within a second reaction chamber.

Provided is a stripping method capable of stripping a resist while suppressing the time and cost of processing required for stripping, while giving sufficient consideration to the load on the environment. The resist stripping method is a method for stripping a resist film-formed on a substrate, including: a pretreatment step of exposing the resist to a heated steam in a predetermined temperature range for a predetermined time; and a stripping step of stripping the resist exposed to the heated steam in the pretreatment step by using a resist stripping liquid, wherein the predetermined temperature range and the predetermined time are set according to the resist.

A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.

A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.

A method for manufacturing a semiconductor device includes forming a first stacked body having a plurality of first material films and a plurality of second material films that are alternately stacked, in a divided region of a semiconductor wafer including a chip region in which a semiconductor element is provided and the divided region between the adjacent chip regions, a plurality of times in a normal line direction of a substrate surface of the semiconductor wafer. The semiconductor wafer is fragmented by a blade having a width wider than the width of the first stacked body.

A method of manufacturing a semiconductor device having first and second main surfaces opposite to each other. The method includes: forming a first electrode at the first main surface of the semiconductor wafer; applying a first tape to the second main surface of the semiconductor wafer; forming roughness at a portion of a surface of the first tape; applying a second tape to an outer peripheral portion of the semiconductor wafer, so as to cover the portion of the surface of the first tape, with the roughness formed thereon, at the second main surface of the semiconductor wafer, to cover a portion of the first main surface of the semiconductor wafer, and to cover a side surface of the semiconductor wafer; heating the semiconductor wafer after the first and second tapes are applied; and subsequently forming a plated film at the surface of the first electrode by a plating treatment.

The present invention aims to provide a semiconductor cleaning agent composition that exhibits a high ability to remove ceria particles remaining as metal residues on a substrate. The present invention relates to a semiconductor cleaning agent composition, containing: a polymer having a structural unit derived from a carboxylic acid-based monomer; and a pH adjuster, the polymer having a weight average molecular weight of 3100 or more, the pH adjuster being one or more compounds selected from the group consisting of a metal hydroxide and an amine compound, and the semiconductor cleaning agent composition having a pH of 7 or higher.

The present application relates to a filler-application apparatus for applying a filler to a gap formed between edge portions of a plurality of substrates that constitute a laminated substrate. The filler-application apparatus includes: a substrate holder configured to hold and rotate a laminated substrate manufactured by bonding a first substrate and a second substrate; an application device located away from the laminated wafer held by the substrate holder, and configured to inject a filler toward a gap formed between a peripheral portion of the first substrate and a peripheral portion of the second substrate; and a protector configured to prevent liquid splashes of the filler, which occur when the filler injected from the application device collides with the gap, from coming into contact with an upper surface and/or a lower surface of the laminated substrate.

Information processing device that includes: an information acquisition unit that acquires reliability degradation factor state information in a chemical mechanical polishing process of a substrate performed by a substrate processing device, the reliability degradation factor state information including at least one of wear state information indicating a wear state of components of the substrate processing device and processing state information indicating a processing state during polishing; and a state prediction unit that predicts reliability information of a polishing endpoint detection function for the reliability degradation factor state information by inputting the reliability degradation factor state information acquired by the information acquisition unit into a learning model that has been trained through machine learning to learn a correlation between the reliability degradation factor state information and reliability information of the polishing endpoint detection function that indicates reliability of an endpoint detection function that detects that the chemical mechanical polishing process has reached an endpoint.