Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a thermal treatment chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the second transfer chamber.

A substrate processing method includes a processing film forming step in which a processing liquid is supplied to a front surface of a substrate to solidify or cure the processing liquid on the front surface of the substrate, thereby forming a processing film on the front surface of the substrate, an etching component forming step in which the processing film is subjected to etching component forming processing to form an etching component in the processing film, an etching step in which a surface layer portion of the substrate is etched by the etching component formed in the etching component forming step, and a processing film removing step in which a peeling liquid is supplied to a front surface of the processing film, thereby peeling the processing film from the front surface of the substrate and removing the processing film from the front surface of the substrate.

A method of manufacturing a display apparatus includes forming a semiconductor layer on a substrate, forming an insulating layer on the semiconductor layer, forming a photoresist pattern on the insulating layer, forming, by etching the insulating layer, a contact hole exposing at least a portion of the semiconductor layer, and performing a primary cleaning of the insulating layer in which the contact hole is formed using a cleaning gas including a fluorine-containing gas and a hydrogen-containing gas.

A silicon wafer, a preparation method of the silicon wafer, and a passivation treatment solution is disclosed. The preparation method of the silicon wafer can include the following steps: providing a solar silicon ingot; cutting the solar silicon ingot with a first treatment solution to form a pretreated silicon wafer; degluing the pretreated silicon wafer with a second treatment solution to obtain a deglued silicon wafer; and cleaning the deglued silicon wafer with a third treatment solution to obtain the silicon wafer; wherein at least one of the first treatment solution, the second treatment solution and the third treatment solution comprises a non-metallic compound that is bonded with a silicon ion via a single bond.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25 C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

The present disclosure relates to vertical stacks including heterolayers, as well as processes and methods of their manufacture. Also described herein are apparatuses and systems for preparing and making such stacks.

An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

A method for processing a substrate, for processing a surface of a substrate having projections/depressions formed on the surface, the method having: a rinsing step S101 of rinsing the surface of the substrate with a rinsing solution containing water; a chemical solution replacement step S102 of bringing a chemical solution into contact with the surface of the substrate that has been rinsed, to replace a liquid adhering to the surface of the substrate from the rinsing solution to the chemical solution; a state change step S103 of raising a temperature of the substrate wetted with the chemical solution to a temperature equal to or higher than the critical temperature of the chemical solution to allow the chemical solution to reach a supercritical state; and a removing step S104 of removing the chemical solution in the supercritical state from the surface of the substrate, in which the chemical solution contains an organic solvent (S1) (excluding, however, organic solvents having a fluorine atom) having a higher specific gravity than water.

The sublimable film formation composition of the present invention includes a sublimable substance and a solvent in which a saturation solubility of the sublimable substance is more than 10% by mass.

A wafer transfer method for forming a second work unit by transferring a wafer of a first work unit including a first ring frame, a first adhesive tape, and the wafer to a second adhesive tape includes sandwiching a claw body between the first ring frame and a second ring frame, affixing the second adhesive tape to a surface of the wafer which surface is not affixed to the first adhesive tape, holding the wafer by the second ring frame via the second adhesive tape, and peeling off the first adhesive tape from the wafer.