A semiconductor device includes a substrate and a bit line structure disposed on the substrate. The bit line structure includes a first conductive structure and a second conductive structure, in which a material of the first conductive structure includes polysilicon. The second conductive structure is disposed in direct contact on the first conductive structure, in which a reactivity of a material of the second conductive structure to oxygen is larger than a reactivity of tungsten to oxygen.

A wafer transfer carrier includes a container and a lid portion. The container accommodates a wafer and a liquid, and is movable in a state where the wafer is in contact with the liquid. The lid portion is capable of sealing an inside of the container.

A substrate processing system includes a protective film forming liquid supplying unit which supplies a protective film forming liquid to one surface of a substrate, a protective film forming unit which solidifies or hardens the protective film forming liquid and forms a protective film on the one surface of the substrate, a suction unit which suctions the one surface of the substrate, a processing unit which executes predetermined processing with respect to the other surface of the substrate in a state that the one surface of the substrate is suctioned by the suction unit, and a removing liquid supplying unit which has a removing liquid discharge port that discharges a removing liquid being capable of removing the protective film and supplies the removing liquid toward the one surface of the substrate from the removing liquid discharge port.

Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

A substrate processing apparatus with a support part that has a substrate-facing surface and supports the substrate in a state of being spaced from the substrate-facing surface. The support part is accommodated into a processing space of a processing chamber. A processing fluid flows in a certain direction in the processing space. In a path for a laminar flow of the processing fluid between the substrate and the support part, a downstream path positioned on a downstream side in the certain direction is wider than an upstream path positioned on an upstream side in the certain direction to reduce the pressure loss of the processing fluid flowing from the upstream path to the downstream path to prevent re-adhesion of the liquid to the substrate.

There is provided a technique capable of cleaning a film deposited on an outer peripheral portion of a substrate placing surface of a substrate support. According to one aspect thereof, a substrate processing apparatus includes: a process chamber where a product substrate is processed; a substrate support provided in the process chamber and provided with a substrate placing surface whereon the product substrate is placed; a process gas supplier wherethrough a process gas is supplied into the process chamber while the product substrate being placed on the substrate placing surface; and a cleaning gas supplier wherethrough a cleaning gas is supplied into the process chamber while a dummy substrate being placed on the substrate placing surface. An outer peripheral portion of the dummy substrate is out of contact with the substrate placing surface in a state where the dummy substrate is placed on the substrate placing surface.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid containing (A) a hypochlorite ion and (C) a solvent, in which pH at 25 C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A substrate is held by an upper holding device, and a lower-surface center region of the substrate is cleaned. During this cleaning, a suction holder of a lower holding device located below the upper holding device is rotated. The substrate held by the upper holding device is transferred to a suction holder of the lower holding device. A lower-surface outer region of the substrate held by the suction holder is cleaned. After the lower-surface center region of the substrate is cleaned and until the substrate is transferred to the suction holder of the lower holding device, rotation of the lower holding device is stopped. Further, the suction holder is moved in a horizontal direction by a base device. A rotation stopping operation for the suction holder and a horizontal moving operation for the suction holder are performed such that the periods for these operation at least partially overlap with each other.

A substrate processing method includes providing a substrate to a chamber of a development device, supplying at least a portion of a first developer provided from a first source storage of the development device onto the substrate at a first temperature and performing a development process, supplying a second developer, in which a pressurized CO.sub.2 provided from a second source storage of the development device is dissolved in a portion of the first developer provided from the first source storage, onto the substrate in the chamber at a second temperature lower than the first temperature, wherein the first developer is replaced with the second developer, transporting the substrate from the chamber of the development device to a supercritical drying device, and supplying at least one of a supercritical fluid and a subcritical fluid onto the substrate in the supercritical drying device and drying the second developer.

A method of manufacturing a semiconductor device includes providing a structure including a first insulating pattern and a metal pattern disposed on a substrate, performing a cleaning process on the structure, exposing the structure to a reducing agent, forming, selectively, a passivation layer on the metal pattern, forming, selectively, a second insulating pattern on the first insulating pattern, and performing thermal processing on the structure.