A substrate assembly includes a first substrate, a second substrate and a bonding member. The first substrate includes a first surface-modified region having a functionality different from that of a remainder region of the first substrate. The second substrate includes a second surface-modified region connected to the first surface-modified region through a physical interaction and having a functionality different from that of a remainder region of the second substrate. The first and second substrates cooperatively define a space therebetween. The bonding member is disposed within said space to bond said first and second substrates together. A method for bonding substrates is also disclosed.

A MEMS device includes a lower substrate having a resonator, an upper substrate disposed to oppose an upper electrode of the resonator, a bonding layer sealing an internal space between the lower substrate and the upper substrate, and wiring layers that contain the same metal material as the bonding layer. Moreover, a rare gas content of each of the wiring layers is less than 1×10.sup.20 (atoms/cm.sup.3).

The present invention provides a microchannel chip including: a resin substrate in which a channel groove is formed on at least one surface of the resin substrate; and a resin film which has a base layer and a pressure-sensitive adhesive layer and is bonded to the resin substrate such that the pressure-sensitive adhesive layer covers the channel groove, in which when a thickness of the base layer of the resin film is defined as X (μm), and a thickness of the pressure-sensitive adhesive layer of the resin film is defined as Y (μm), all of Relational Expressions (1) to (3) are satisfied.

Y≥0.4X−25  (1)

50≥Y≥3  (2)

X≥40  (3)

A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-electromechanical-system (MEMS) structure, a duration of an acid-based etch process in the eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when the preclean process is performed. The increased duration of the acid-based etch process enables the acid-based etch process to remove the oxide from the one or more surfaces of the device wafer without the use of a preceding preclean process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of stiction between suspended mechanical components of the MEMS structure, and/or reduces the likelihood that the MEMS structure may be rendered defective or inoperable during manufacturing, which increases process yield.

A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.

In embodiments, a silicon part and a titanium part may be soldered together without breakage or instability. In embodiments, silicon and titanium may be soldered together with a soft solder joint including indium silver, where the temperature excursion between solder solidus and use temperature limits the strain between the two surfaces. In embodiments a silicon micropump surface may be treated to remove its silicon oxide coating, and then Ti—W, Nickel, and gold layers successively sputtered onto it. A corresponding titanium manifold may be ground flat, and plated with electroless nickel. The nickel plated manifold may then be baked, so as to create a transition from pure Ti to Ni—Ti alloy to pure Ni at the surface of the manifold, and for protection of the upper Ni surface, a layer of gold may be added. The two surfaces may then be soldered in forming gas.

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.

The technology of this application relates to an encapsulation structure that includes a micro-electromechanical system (MEMS) device, a substrate, and an attachment material. Materials included in the substrate include at least a first-type material and a second-type material, a coefficient of thermal expansion of the first-type material is less than a coefficient of thermal expansion of a base material of the MEMS device, and a coefficient of thermal expansion of the second-type material is greater than the coefficient of thermal expansion of the base material of the MEMS device. The attachment material is located between the MEMS device and the substrate, and is configured to attach the MEMS device to the substrate. The substrate includes a plurality of different materials.